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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSC882N03MSGATMA1 DISTI # BSC882N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 34V 22A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC882N03MSGATMA1 DISTI # BSC882N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 34V 22A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC882N03MSGATMA1 DISTI # BSC882N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 34V 22A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC882N03MSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 35000 |
|
| BSC882N03MS G DISTI # 726-BSC882N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 22A TDSON-8 RoHS: Compliant | 0 |
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BSC882N03LS G OMO.#: OMO-BSC882N03LS-G |
MOSFET N-Ch 34V 100A SON-8 |
|
Mfr.#: BSC882N03LS OMO.#: OMO-BSC882N03LS-1190 |
ブランドニューオリジナル |
|
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Mfr.#: BSC882N03LSG OMO.#: OMO-BSC882N03LSG-1190 |
Trans MOSFET N-CH 34V 100A 8-Pin TDSON (Alt: BSC882N03LS G) |
|
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Mfr.#: BSC882N03MS OMO.#: OMO-BSC882N03MS-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSC882N03MS G OMO.#: OMO-BSC882N03MS-G-1190 |
MOSFET N-Ch 30V 22A TDSON-8 |
|
|
Mfr.#: BSC882N03MSG OMO.#: OMO-BSC882N03MSG-1190 |
Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC882N03MSGATMA1 |
MOSFET N-CH 34V 22A TDSON-8 |
|
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Mfr.#: BSC882N03MSGXT OMO.#: OMO-BSC882N03MSGXT-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSC882N03LSGATMA1 |
MOSFET N-CH TDSON-8 |
|
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Mfr.#: BSC882N03LS G OMO.#: OMO-BSC882N03LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 34V 100A SON-8 |