SI8802DB-T2-E1

Mfr. #:: SI8802DB-T2-E1
メーカー:: Vishay
説明:: MOSFET N-CH 8V MICROFOOT
ライフサイクル:: メーカー新製品
データシート:: SI8802DB-T2-E1 データシート
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詳しくは:: SI8802DB-T2-E1 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

パッケージ-ケース: 4-XFBGA

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 4-Microfoot

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 500mW

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 8V

入力-静電容量-Ciss-Vds: -

FET機能: 標準

Current-Continuous-Drain-Id-25°C: -

Rds-On-Max-Id-Vgs: 54 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 700mV @ 250μA

ゲートチャージ-Qg-Vgs: 6.5nC @ 4.5V

Pd-電力損失: 900 mW

Vgs-Gate-Source-Voltage: 5 V

Id-連続-ドレイン-電流: 3.5 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 8 V

Rds-On-Drain-Source-Resistance: 44 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 4.3 nC

フォワード-相互コンダクタンス-最小: 13 S

Tags: SI8802DB-T, SI8802, SI880, Si88, SI8

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8802DB-T2-E1 説明

***ure Electronics: Single N-Channel 8 V 54 mOhm 4.3 nC Surface Mount Power Mosfet - MICRO FOOT

***et: Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI8802DB-T2-E1 詳しくは

Si88xx 8V TrenchFET® Power MOSFETs: Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chipscale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package which occupies up to 36 % less board space than the next smallest chipscale devices, yet offer comparable − and even lower − on resistance (RDS(on)). These Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs can be used for load switching in handheld devices including smart phones, tablets, portable media players, and mobile computing devices. The Si88xx 8V TrenchFET® Power MOSFETs' ultra-thin 0.357 mm profiles saves valuable board space in these applications − enabling smaller, slimmer mobile products.Learn More

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Market price

モデル	メーカー	説明	ストック	価格
SI8802DB-T2-E1 DISTI # V72:2272_09216581	Vishay Intertechnologies	Trans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R RoHS: Compliant	2974	1000:$0.1511 500:$0.2014 250:$0.2257 100:$0.2508 25:$0.3335 10:$0.3705 1:$0.4750
SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1CT-ND	Vishay Siliconix	MOSFET N-CH 8V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	10259In Stock	1000:$0.1695 500:$0.2193 100:$0.2991 10:$0.3990 1:$0.4700
SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1DKR-ND	Vishay Siliconix	MOSFET N-CH 8V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	10259In Stock	1000:$0.1695 500:$0.2193 100:$0.2991 10:$0.3990 1:$0.4700
SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1TR-ND	Vishay Siliconix	MOSFET N-CH 8V MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.1597
SI8802DB-T2-E1 DISTI # 30155844	Vishay Intertechnologies	Trans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R RoHS: Compliant	3000	3000:$0.1683
SI8802DB-T2-E1 DISTI # 30883628	Vishay Intertechnologies	Trans MOSFET N-CH 8V 3A 4-Pin Micro Foot T/R RoHS: Compliant	2974	1000:$0.1511 500:$0.2014 250:$0.2257 100:$0.2508 56:$0.3335
SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8802DB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1279 6000:$0.1239 12000:$0.1189 18000:$0.1149 30000:$0.1119
SI8802DB-T2-E1 DISTI # SI8802DB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 8V 3.5A 4-Pin Micro Foot T/R (Alt: SI8802DB-T2-E1) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI8802DB-T2-E1 DISTI # 99W9639	Vishay Intertechnologies	MOSFET, N-CH, 8V, 3.5A, MICRO FOOT-4, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV, RoHS Compliant: Yes	0	1:$0.1310 3000:$0.1300 6000:$0.1240 12000:$0.1100
SI8802DB-T2-E1 DISTI # 04X9769	Vishay Intertechnologies	MOSFET, N CHANNEL, 8V, 3.5A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:350mV , RoHS Compliant: Yes	0	1:$0.2550 10:$0.2470 100:$0.1950 250:$0.1850 500:$0.1730 1000:$0.1390
SI8802DB-T2-E1 DISTI # 781-SI8802DB-T2-E1	Vishay Intertechnologies	MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant	14450	1:$0.5800 10:$0.3900 100:$0.2640 500:$0.2120 1000:$0.1590 3000:$0.1460 6000:$0.1370 9000:$0.1280
SI8802DBT2E1	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI8802DB-T2-E1 DISTI # C1S803601968173	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2974	250:$0.2257 100:$0.2508 25:$0.3335 10:$0.3705
SI8802DB-T2-E1	Vishay Intertechnologies	MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant	Americas -

画像	モデル	説明
	Mfr.#: SI8802DB-T2-E1 OMO.#: OMO-SI8802DB-T2-E1	MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
	Mfr.#: SI8802DB-T2-E1-CUT TAPE OMO.#: OMO-SI8802DB-T2-E1-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: SI8802DB-T2-E1 OMO.#: OMO-SI8802DB-T2-E1-VISHAY	MOSFET N-CH 8V MICROFOOT
	Mfr.#: SI8802DB-T2-EY OMO.#: OMO-SI8802DB-T2-EY-1190	ブランドニューオリジナル
	Mfr.#: SI8802DBT2E1 OMO.#: OMO-SI8802DBT2E1-1190	Small Signal Field-Effect Transistor, 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI8802DB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes