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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| IPD122N10N3GBTMA1 DISTI # IPD122N10N3GBTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 59A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD122N10N3GBTMA1 DISTI # IPD122N10N3GBTMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 59A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPD122N10N3GBTMA1 DISTI # IPD122N10N3GBTMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 59A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPD122N10N3GBTMA1 DISTI # IPD122N10N3GBTMA1 | Infineon Technologies AG | - Bulk (Alt: IPD122N10N3GBTMA1) RoHS: Compliant Min Qty: 863 Container: Bulk | Americas - 0 |
|
| IPD122N10N3GBTMA1 DISTI # 726-IPD122N10N3GBTMA | Infineon Technologies AG | MOSFET N-Ch 100V 59A DPAK-2 OptiMOS 3 RoHS: Compliant | 0 | |
| IPD122N10N3GBTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 59A I(D), 100V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 100 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: IPD122N10N3GATMA1 OMO.#: OMO-IPD122N10N3GATMA1 |
MOSFET |
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Mfr.#: IPD122N10N3GATMA1 |
MOSFET N-CH 100V 59A |
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Mfr.#: IPD122N10N3 G OMO.#: OMO-IPD122N10N3-G-1190 |
MOSFET N-Ch 100V 59A DPAK-2 OptiMOS 3 |
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Mfr.#: IPD122N10N3G OMO.#: OMO-IPD122N10N3G-1190 |
100V,59A,N Channel Power MOSFET |
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Mfr.#: IPD122N10N3GB OMO.#: OMO-IPD122N10N3GB-1190 |
ブランドニューオリジナル |
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Mfr.#: IPD122N10N3GBTMA1 |
MOSFET N-CH 100V 59A TO252-3 |
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Mfr.#: IPD122N10N3GBTMA1 , 2SD2 |
ブランドニューオリジナル |