BSC026N02KS G

BSC026N02KS G
Mfr. #:
BSC026N02KS G
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
ライフサイクル:
メーカー新製品
データシート:
BSC026N02KS G データシート
配達:
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ECAD Model:
詳しくは:
BSC026N02KS G 詳しくは
製品属性
属性値
メーカー
インフィニオンテクノロジーズ
製品カテゴリ
FET-シングル
シリーズ
OptiMOS
包装
Digi-ReelR代替パッケージ
パーツエイリアス
BSC026N02KSGAUMA1 BSC026N02KSGXT SP000379664
取り付けスタイル
SMD / SMT
商標名
OptiMOS
パッケージ-ケース
8-PowerTDFN
テクノロジー
Si
作動温度
-55°C ~ 150°C (TJ)
取付タイプ
表面実装
チャネル数
1 Channel
サプライヤー-デバイス-パッケージ
PG-TDSON-8
構成
シングルクワッドドレイントリプルソース
FETタイプ
MOSFET Nチャネル、金属酸化物
パワーマックス
78W
トランジスタタイプ
1 N-Channel
Drain-to-Source-Voltage-Vdss
20V
入力-静電容量-Ciss-Vds
7800pF @ 10V
FET機能
Logic Level Gate, 2.5V Drive
Current-Continuous-Drain-Id-25°C
25A (Ta), 100A (Tc)
Rds-On-Max-Id-Vgs
2.6 mOhm @ 50A, 4.5V
Vgs-th-Max-Id
1.2V @ 200μA
ゲートチャージ-Qg-Vgs
52.7nC @ 4.5V
Pd-電力損失
2.8 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
9 ns
立ち上がり時間
115 ns
Vgs-Gate-Source-Voltage
12 V
Id-連続-ドレイン-電流
25 A
Vds-ドレイン-ソース-ブレークダウン-電圧
20 V
Rds-On-Drain-Source-Resistance
2.6 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
52 ns
典型的なターンオン遅延時間
21 ns
チャネルモード
強化
Tags
BSC026N02KSG, BSC026N02, BSC026N0, BSC026, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
モデル メーカー 説明 ストック 価格
BSC026N02KSGAUMA1
DISTI # V72:2272_06384322
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
4849
  • 3000:$0.5712
  • 1000:$0.6346
  • 500:$0.8121
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 10:$1.1161
  • 1:$1.2554
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8909In Stock
  • 1000:$0.8016
  • 500:$1.0154
  • 100:$1.3094
  • 10:$1.6570
  • 1:$1.8700
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
8909In Stock
  • 1000:$0.8016
  • 500:$1.0154
  • 100:$1.3094
  • 10:$1.6570
  • 1:$1.8700
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.6901
BSC026N02KSGAUMA1
DISTI # 30701482
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 10000:$0.5798
  • 5000:$0.6029
BSC026N02KSGAUMA1
DISTI # 26195427
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
4849
  • 3000:$0.5712
  • 1000:$0.6346
  • 500:$0.8121
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 11:$1.1161
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC026N02KSGAUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.6789
  • 10000:$0.6549
  • 20000:$0.6309
  • 30000:$0.6099
  • 50000:$0.5989
BSC026N02KSGAUMA1
DISTI # SP000379664
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON T/R (Alt: SP000379664)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€0.9889
  • 10000:€0.7709
  • 20000:€0.6889
  • 30000:€0.6269
  • 50000:€0.5879
BSC026N02KS G
DISTI # 726-BSC026N02KSG
Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant
7674
  • 1:$1.3700
  • 10:$1.1700
  • 100:$0.8920
  • 500:$0.7880
  • 1000:$0.6220
BSC026N02KSGAUMA1
DISTI # 726-BSC026N02KSGAUMA
Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant
2883
  • 1:$1.5500
  • 10:$1.3300
  • 100:$1.0200
  • 500:$0.8970
  • 1000:$0.7080
  • 5000:$0.6280
BSC026N02KSGInfineon Technologies AGPower Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
40500
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
BSC026N02KSGAUMA1
DISTI # 7528154P
Infineon Technologies AGMOSFET N-CHANNEL 20V 25A OPTIMOS2 TDSON8, RL3490
  • 50:£0.8500
  • 250:£0.6650
  • 1250:£0.4650
  • 2500:£0.4400
BSC026N02KSGAUMA1
DISTI # C1S322000644539
Infineon Technologies AGMOSFETs
RoHS: Compliant
5000
  • 5000:$0.6400
BSC026N02KSGAUMA1
DISTI # C1S322000653078
Infineon Technologies AGMOSFETs
RoHS: Compliant
4849
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 10:$1.1161
BSC026N02KSGAUMA1
DISTI # 1775434
Infineon Technologies AGMOSFET, N CH, 100A, 20V, PG-TDSON-8
RoHS: Compliant
0
  • 1:$2.1700
  • 10:$1.8500
  • 100:$1.4100
  • 500:$1.2500
  • 1000:$0.9840
  • 5000:$0.9840
画像 モデル 説明
BSC026N04LS

Mfr.#: BSC026N04LS

OMO.#: OMO-BSC026N04LS

MOSFET DIFFERENTIATED MOSFETS
BSC026N02KS G

Mfr.#: BSC026N02KS G

OMO.#: OMO-BSC026N02KS-G-1190

MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC026N02KSG

Mfr.#: BSC026N02KSG

OMO.#: OMO-BSC026N02KSG-1190

Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC026N02KSGAUMA1

Mfr.#: BSC026N02KSGAUMA1

OMO.#: OMO-BSC026N02KSGAUMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 20V 100A TDSON-8
BSC026N04LS

Mfr.#: BSC026N04LS

OMO.#: OMO-BSC026N04LS-1190

Trans MOSFET N-CH 40V 23A
BSC026N04LSATMA1

Mfr.#: BSC026N04LSATMA1

OMO.#: OMO-BSC026N04LSATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 23A 8TDSON
BSC026N08NS5

Mfr.#: BSC026N08NS5

OMO.#: OMO-BSC026N08NS5-1190

POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 80V, 0.0026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSC026NE2LS5ATMA1-CUT TAPE

Mfr.#: BSC026NE2LS5ATMA1-CUT TAPE

OMO.#: OMO-BSC026NE2LS5ATMA1-CUT-TAPE-1190

ブランドニューオリジナル
BSC026NE2LS5ATMA1

Mfr.#: BSC026NE2LS5ATMA1

OMO.#: OMO-BSC026NE2LS5ATMA1-INFINEON-TECHNOLOGIES

MOSFET LV POWER MOS
BSC026N08NS5ATMA1

Mfr.#: BSC026N08NS5ATMA1

OMO.#: OMO-BSC026N08NS5ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-Ch 80V 100A TDSON-8
可用性
ストック:
Available
注文中:
1000
数量を入力してください:
BSC026N02KS Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$0.93
$0.93
10
$0.89
$8.86
100
$0.84
$83.97
500
$0.79
$396.55
1000
$0.75
$746.40
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