FDMD85100

Mfr. #:: FDMD85100
メーカー:: ON Semiconductor
説明:: IGBT Transistors MOSFET 100V Dual N-Channel PowerTrench MOSFET
ライフサイクル:: メーカー新製品
データシート:: FDMD85100 データシート
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ECAD Model:
詳しくは:: FDMD85100 詳しくは

製品属性
属性値

メーカー: フェアチャイルドセミコンダクター

製品カテゴリ: FET-アレイ

シリーズ: PowerTrenchR

包装: Digi-ReelR代替パッケージ

単位重量: 0.008818 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-PowerWDFN

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 8-Power 5x6

構成: デュアル

FETタイプ: 2 N-Channel (Half Bridge)

パワーマックス: 2.2W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

入力-静電容量-Ciss-Vds: 2230pF @ 50V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 10.4A

Rds-On-Max-Id-Vgs: 9.9 mOhm @ 10.4A, 10V

Vgs-th-Max-Id: 4V @ 250μA

ゲートチャージ-Qg-Vgs: 31nC @ 10V

Pd-電力損失: 50 W 50 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 4.2 ns 4.4 ns

立ち上がり時間: 5 ns 5.6 ns

Vgs-Gate-Source-Voltage: 20 V 20 V

Id-連続-ドレイン-電流: 48 A 48 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 100 V 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 2 V 2V

Rds-On-Drain-Source-Resistance: 18.7 mOhms 18.6 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 19 ns 18 ns

典型的なターンオン遅延時間: 14 ns 12.5 ns

Qg-Gate-Charge: 22 nC 21 nC

フォワード-相互コンダクタンス-最小: 27 S 26 S

チャネルモード: 強化

Tags: FDMD85, FDMD, FDM

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMD85100 説明

***et Japan: Transistor MOSFET Array Dual N-CH 100V 48A 8-Pin PQFN T/R

***emi: Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ

***ark: 100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, SYMMETRICAL HAL

***rchild Semiconductor: This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

FDMD85100 詳しくは

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

モデル	メーカー	説明	ストック	価格
FDMD85100 DISTI # V72:2272_06337942	ON Semiconductor	100V DUAL N-CHANNEL POWERTRENC	2898	1000:$1.4840 500:$1.7360 250:$1.9310 100:$2.0230 25:$2.3150 10:$2.3170 1:$2.7030
FDMD85100 DISTI # FDMD85100CT-ND	ON Semiconductor	MOSFET 2N-CH 100V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5182In Stock	1000:$1.6904 500:$2.0043 100:$2.4752 10:$3.0190 1:$3.3800
FDMD85100 DISTI # FDMD85100DKR-ND	ON Semiconductor	MOSFET 2N-CH 100V RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5182In Stock	1000:$1.6904 500:$2.0043 100:$2.4752 10:$3.0190 1:$3.3800
FDMD85100 DISTI # FDMD85100TR-ND	ON Semiconductor	MOSFET 2N-CH 100V RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$1.5591
FDMD85100 DISTI # 27527757	ON Semiconductor	100V DUAL N-CHANNEL POWERTRENC	9000	3000:$1.5590
FDMD85100 DISTI # 25975390	ON Semiconductor	100V DUAL N-CHANNEL POWERTRENC	2898	1000:$1.4840 500:$1.7360 250:$1.9310 100:$2.0230 25:$2.3150 10:$2.3170 5:$2.7030
FDMD85100 DISTI # FDMD85100	ON Semiconductor	Trans MOSFET N-CH 100V 10.4A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD85100) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.2900 6000:$1.2900 12000:$1.2900 18000:$1.2900 30000:$1.2900
FDMD85100 DISTI # FDMD85100	ON Semiconductor	Trans MOSFET N-CH 100V 10.4A 8-Pin PQFN T/R (Alt: FDMD85100) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€2.2900 6000:€1.7900 12000:€1.5900 18000:€1.3900 30000:€1.3900
FDMD85100 DISTI # 512-FDMD85100	ON Semiconductor	MOSFET FET 100V 9.9 MOHM PQFN56 RoHS: Compliant	2807	1:$2.8300 10:$2.4000 100:$2.0800 250:$1.9800 500:$1.7700 1000:$1.5000
FDMD85100	Fairchild Semiconductor Corporation	Power Field-Effect Transistor RoHS: Compliant	2101	1000:$1.5500 500:$1.6300 100:$1.7000 25:$1.7700 1:$1.9100
FDMD85100 DISTI # C1S541901391436	ON Semiconductor	Trans MOSFET N-CH 100V 10.4A 8-Pin PQFN EP T/R RoHS: Compliant	2898	250:$1.9310 100:$2.0230 25:$2.3150 10:$2.3170 1:$2.7030

画像	モデル	説明
	Mfr.#: FDMD8440L OMO.#: OMO-FDMD8440L	MOSFET FET 40V 87A 2.6 mOhm
	Mfr.#: FDMD8560L OMO.#: OMO-FDMD8560L	MOSFET 60V Dual N-Channel PowerTrench MOSFET
	Mfr.#: FDMD8260LET60 OMO.#: OMO-FDMD8260LET60	MOSFET 60V/20V Dual Nch Power Trench MOSFET
	Mfr.#: FDMD8240L OMO.#: OMO-FDMD8240L	MOSFET PT8 N-ch40VLLDualNch PowerTrench MOSFET
	Mfr.#: FDMD85100 OMO.#: OMO-FDMD85100	MOSFET FET 100V 9.9 MOHM PQFN56
	Mfr.#: FDMD8260LET60 OMO.#: OMO-FDMD8260LET60-ON-SEMICONDUCTOR	MOSFET 2N-CH 60V 15A
	Mfr.#: FDMD84100 OMO.#: OMO-FDMD84100-ON-SEMICONDUCTOR	MOSFET 2N-CH 100V 7A 8-PQFN
	Mfr.#: FDMD86100 OMO.#: OMO-FDMD86100-ON-SEMICONDUCTOR	MOSFET 2N-CH 100V
	Mfr.#: FDMD8240LET40 OMO.#: OMO-FDMD8240LET40-ON-SEMICONDUCTOR	MOSFET 2N-CH 40V 24A POWER3.3X5
	Mfr.#: FDMD8900 OMO.#: OMO-FDMD8900-ON-SEMICONDUCTOR	MOSFET 2N-CH 30V POWER

FDMD85100

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes