SI7106DN-T1-E3

Mfr. #:: SI7106DN-T1-E3
メーカー:: Vishay
説明:: MOSFET N-CH 20V 12.5A 1212-8
ライフサイクル:: メーカー新製品
データシート:: SI7106DN-T1-E3 データシート
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ECAD Model:

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI7106DN-E3

取り付けスタイル: SMD / SMT

商標名: TrenchFET / PowerPAK

パッケージ-ケース: PowerPAKR 1212-8

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR 1212-8

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 1.5W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 20V

入力-静電容量-Ciss-Vds: -

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 12.5A (Ta)

Rds-On-Max-Id-Vgs: 6.2 mOhm @ 19.5A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

ゲートチャージ-Qg-Vgs: 27nC @ 4.5V

Pd-電力損失: 1.5 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 15 ns

立ち上がり時間: 15 ns

Vgs-Gate-Source-Voltage: 12 V

Id-連続-ドレイン-電流: 12.5 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 20 V

Rds-On-Drain-Source-Resistance: 6.2 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 50 ns

典型的なターンオン遅延時間: 25 ns

チャネルモード: 強化

Tags: SI7106DN-T1, SI7106DN-T, SI7106D, SI7106, SI710, SI71, SI7

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7106DN-T1-E3 説明

***ied Electronics & Automation: SI7106DN-T1-E3 N-channel MOSFET Transistor; 12.5 A; 20 V; 8-Pin PowerPAK 1212

***ure Electronics: Single N-Channel 20 V 6.2 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8

***et Europe: Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R

***Components: MOSFET N-Ch 20V 12.5A PowerPAK 1212

***nell: N CH MOSFET, 20V, 19.5A, POWERPAK

***i-Key: MOSFET N-CH 20V 12.5A 1212-8

***ser: N-Channel MOSFETs 20V 19.5A 0.0062Ohm

***: 20V, 6.2 [email protected]

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:19500mA; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.0098ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes

***ment14 APAC: N CH MOSFET, 20V, 19.5A, POWERPAK; Trans; N CH MOSFET, 20V, 19.5A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):9.8mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs Typ:1.5V

Market price

モデル	メーカー	説明	ストック	価格
SI7106DN-T1-E3 DISTI # V72:2272_09215605	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	1057	1000:$0.5701 500:$0.7207 250:$0.8720 100:$0.8753 25:$1.0357 10:$1.0408 1:$1.1330
SI7106DN-T1-E3 DISTI # SI7106DN-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	38678In Stock	1000:$0.6326 500:$0.8012 100:$1.0332 10:$1.3070 1:$1.4800
SI7106DN-T1-E3 DISTI # SI7106DN-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	38678In Stock	1000:$0.6326 500:$0.8012 100:$1.0332 10:$1.3070 1:$1.4800
SI7106DN-T1-E3 DISTI # SI7106DN-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	33000In Stock	3000:$0.5732
SI7106DN-T1-E3 DISTI # 25789861	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	1057	1000:$0.5701 500:$0.7207 250:$0.8720 100:$0.8753 25:$1.0357 15:$1.0408
SI7106DN-T1-E3 DISTI # SI7106DN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R (Alt: SI7106DN-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 6000	3000:€1.6059 6000:€1.1249 12000:€0.9279 18000:€0.8239 30000:€0.7789
SI7106DN-T1-E3 DISTI # SI7106DN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7106DN-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4849 6000:$0.4709 12000:$0.4519 18000:$0.4389 30000:$0.4269
SI7106DN-T1-E3 DISTI # 51K6978	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 19.5A, POWERPAK,Transistor Polarity:N Channel,Continuous Drain Current Id:19.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):9.8mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.5V , RoHS Compliant: Yes	0	1:$1.9000 25:$1.5800 50:$1.4100 100:$1.2300 250:$1.1500 500:$1.0700 1000:$1.0300
SI7106DN-T1-E3 DISTI # 70026262	Vishay Siliconix	SI7106DN-T1-E3 N-channel MOSFET Transistor,12.5 A,20 V,8-Pin PowerPAK 1212 RoHS: Compliant	0	3000:$1.1400 6000:$1.0900 9000:$1.0100
SI7106DN-T1-E3 DISTI # 781-SI7106DN-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	6466	1:$1.9000 10:$1.5800 100:$1.2300 500:$1.0700 1000:$1.0400 3000:$1.0200
SI7106DN-T1-E3	Vishay Intertechnologies	Single N-Channel 20 V 6.2 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8 RoHS: Compliant	3000Reel	3000:$0.6850
SI7106DN-T1-E3	Vishay BLH		2965	5:$1.1250 19:$0.7313 70:$0.4219 239:$0.3600 515:$0.3150 1224:$0.2925
SI7106DN-T1-E3	Vishay Intertechnologies	MOSFET Transistor, N-Channel, LLCC	3	1:$1.3540
SI7106DN-T1-E3	Vishay Intertechnologies	MOSFET Transistor, N-Channel, LLCC	2372	2052:$0.3750 445:$0.3900 1:$1.5000
SI7106DN-T1-E3	Vishay Intertechnologies	MOSFET Transistor, N-Channel, LLCC	3513	780:$1.1663 418:$1.2829 1:$3.1100
SI7106DNT1E3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI7106DN-T1-E3	Vishay Intertechnologies	INSTOCK	1991
SI7106DN-T1-E3 DISTI # 1837425	Vishay Intertechnologies	N CH MOSFET, 20V, 19.5A, POWERPAK RoHS: Compliant	0	1:$2.3500 10:$2.0700 100:$1.6400 500:$1.2700 1000:$1.2400
SI7106DN-T1-E3 DISTI # 1837425	Vishay Intertechnologies	N CH MOSFET, 20V, 19.5A, POWERPAK RoHS: Compliant	0	3000:£0.9060
SI7106DN-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8	Americas - 63000	3000:$0.4650 6000:$0.4390 12000:$0.4260 24000:$0.4190
SI7106DN-T1-E3 DISTI # XSFP00000063497	Vishay Siliconix	RoHS: Compliant	4038	3000:$1.3700 4038:$1.2500

画像	モデル	説明
	Mfr.#: SI7106DN-T1-GE3 OMO.#: OMO-SI7106DN-T1-GE3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7106DN-T1-E3 OMO.#: OMO-SI7106DN-T1-E3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7106DN-T1-E3-CUT TAPE OMO.#: OMO-SI7106DN-T1-E3-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: SI7106DN OMO.#: OMO-SI7106DN-1190	ブランドニューオリジナル
	Mfr.#: SI7106DN-T1-GE3 OMO.#: OMO-SI7106DN-T1-GE3-VISHAY	MOSFET N-CH 20V 12.5A 1212-8
	Mfr.#: SI7106DN-TI-E3 OMO.#: OMO-SI7106DN-TI-E3-1190	ブランドニューオリジナル
	Mfr.#: SI7106DNT1E3 OMO.#: OMO-SI7106DNT1E3-1190	Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: SI7106DN-T1-E3 OMO.#: OMO-SI7106DN-T1-E3-VISHAY	MOSFET N-CH 20V 12.5A 1212-8

SI7106DN-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes