RFD4N06L

RFD4N06L
Mfr. #:
RFD4N06L
メーカー:
Rochester Electronics, LLC
説明:
Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
ライフサイクル:
メーカー新製品
データシート:
RFD4N06L データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
RFD4N, RFD4, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
モデル メーカー 説明 ストック 価格
RFD4N06LSM9A
DISTI # RFD4N06LSM9A-ND
ON SemiconductorMOSFET N-CH 60V 4A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    RFD4N06LSM9A
    DISTI # 512-RFD4N06LSM9A
    ON SemiconductorMOSFET 60V Single
    RoHS: Compliant
    0
      RFD4N06LSM9AFairchild Semiconductor CorporationPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RoHS: Compliant
      67132
      • 1000:$0.5100
      • 500:$0.5400
      • 100:$0.5600
      • 25:$0.5900
      • 1:$0.6300
      RFD4N06LHarris SemiconductorPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Not Compliant
      1424
      • 1000:$0.2800
      • 500:$0.2900
      • 100:$0.3000
      • 25:$0.3200
      • 1:$0.3400
      RFD4N06LHARTING Technology GroupPower Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RoHS: Not Compliant
      975
        RFD4N06LSM9AS2457Fairchild Semiconductor Corporation 
        RoHS: Compliant
        38489
          画像 モデル 説明
          RFD4N06LSM9A

          Mfr.#: RFD4N06LSM9A

          OMO.#: OMO-RFD4N06LSM9A

          MOSFET 60V Single
          RFD40N03

          Mfr.#: RFD40N03

          OMO.#: OMO-RFD40N03-1190

          ブランドニューオリジナル
          RFD43F-NF

          Mfr.#: RFD43F-NF

          OMO.#: OMO-RFD43F-NF-1190

          ブランドニューオリジナル
          RFD4N06L

          Mfr.#: RFD4N06L

          OMO.#: OMO-RFD4N06L-1190

          Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
          RFD4N06LSM

          Mfr.#: RFD4N06LSM

          OMO.#: OMO-RFD4N06LSM-1190

          ブランドニューオリジナル
          RFD4N06LSM9A

          Mfr.#: RFD4N06LSM9A

          OMO.#: OMO-RFD4N06LSM9A-ON-SEMICONDUCTOR

          MOSFET N-CH 60V 4A DPAK
          RFD4N06LSM9AS2457

          Mfr.#: RFD4N06LSM9AS2457

          OMO.#: OMO-RFD4N06LSM9AS2457-1190

          ブランドニューオリジナル
          可用性
          ストック:
          Available
          注文中:
          2500
          数量を入力してください:
          RFD4N06Lの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
          参考価格(USD)
          単価
          小計金額
          1
          $0.00
          $0.00
          10
          $0.00
          $0.00
          100
          $0.00
          $0.00
          500
          $0.00
          $0.00
          1000
          $0.00
          $0.00
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