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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| STGW80H65DFB DISTI # 497-14368-ND | STMicroelectronics | IGBT 650V 120A 469W TO-247 RoHS: Compliant Min Qty: 1 Container: Tube | 102In Stock |
|
| STGW80H65DFB-4 DISTI # STGW80H65DFB-4-ND | STMicroelectronics | IGBT BIPO 650V 80A TO247 RoHS: Compliant Min Qty: 600 Container: Tube | Temporarily Out of Stock |
|
| STGW80H65DFB DISTI # STGW80H65DFB-4 | STMicroelectronics | Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB-4) RoHS: Compliant Min Qty: 600 Container: Tube | Americas - 0 |
|
| STGW80H65DFB DISTI # STGW80H65DFB | STMicroelectronics | Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW80H65DFB) RoHS: Compliant Min Qty: 600 Container: Tube | Americas - 0 |
|
| STGW80H65DFB DISTI # 45AC7608 | STMicroelectronics | Trans IGBT Chip N-CH 650V 120A 3-Pin TO-247 Tube - Bulk (Alt: 45AC7608) RoHS: Compliant Min Qty: 1 Container: Bulk | Americas - 0 |
|
| STGW80H65DFB DISTI # 45AC7608 | STMicroelectronics | IGBT, SINGLE, 650V, 120A, TO-247,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes | 142 |
|
| STGW80H65DFB | STMicroelectronics | HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-247 RoHS: Compliant | 4Tube |
|
| STGW80H65DFB DISTI # 511-STGW80H65DFB | STMicroelectronics | IGBT Transistors Trench gte FieldStop IGBT 650V 80A RoHS: Compliant | 34 |
|
| STGW80H65DFB-4 DISTI # 511-STGW80H65DFB-4 | STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed | 0 |
|
| STGW80H65DFB | ACTIVE COMPNTS/DIODES | 25 | ||
| STGW80H65DFB DISTI # 7925814P | STMicroelectronics | IGBT N-CH 650V 80A HIGH-SPEED TO247, TU | 183 |
|
| STGW80H65DFB DISTI # 2807180 | STMicroelectronics | IGBT, SINGLE, 650V, 120A, TO-247 RoHS: Compliant | 950 |
|
| STGW80H65DFB DISTI # 2807180 | STMicroelectronics | IGBT, SINGLE, 650V, 120A, TO-247 RoHS: Compliant | 950 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: GW80H65DFB OMO.#: OMO-GW80H65DFB-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: GW80H65FB OMO.#: OMO-GW80H65FB-1190 |
ブランドニューオリジナル |