A2I20H060GNR1

A2I20H060GNR1
Mfr. #:
A2I20H060GNR1
メーカー:
NXP / Freescale
説明:
RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V
ライフサイクル:
メーカー新製品
データシート:
A2I20H060GNR1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
A2I20H060GNR1 詳しくは
製品属性
属性値
メーカー:
NXP
製品カテゴリ:
RFアンプ
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-270WBG-15
タイプ:
RFLDMOS広帯域統合型パワーアンプ
動作周波数:
1.8 GHz to 2.2 GHz
P1dB-圧縮ポイント:
48 dBm
利得:
28.9 dB
動作供給電圧:
28 V
テスト頻度:
1.8425 GHz
動作供給電流:
145 mA
最低動作温度:
- 40 C
最高作動温度:
+ 150 C
包装:
リール
ブランド:
NXP /フリースケール
チャネル数:
2 Channel
製品タイプ:
RFアンプ
ファクトリーパックの数量:
500
サブカテゴリ:
ワイヤレスおよびRF集積回路
パーツ番号エイリアス:
935316306528
単位重量:
0.056385 oz
Tags
A2I20H06, A2I20H, A2I20, A2I2, A2I
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
Amplifier,1800 to 2200 MHz, 63 W, Typ Gain in dB is 28.4 @ 1840 MHz, 28 V, LDMOS, SOT1722
*** Semiconductors SCT
Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V, FM15F
***ical
RF Amp Module Dual Power Amp 2.2GHz 32V 17-Pin(15+2Tab) TO-270WBG EP T/R
***et
Power Amp Dual 2200MHz 28.9dB 15-Pin TO-270WB T/R
***el Electronic
IC DGT POT 10KOHM 1024TAP 16TQFN
***ark
AF7IC 2.1GHZ60WTO270WB15G ROHS COMPLIANT: YES
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
モデル メーカー 説明 ストック 価格
A2I20H060GNR1
DISTI # V36:1790_14213681
NXP SemiconductorsRF Amp Dual Power Amp 2.2GHz 32V 17-Pin(15+2Tab) TO-270WBG EP T/R0
  • 500000:$48.7500
  • 250000:$48.7600
  • 50000:$50.0500
  • 5000:$52.9700
  • 500:$53.5000
A2I20H060GNR1
DISTI # A2I20H060GNR1-ND
NXP SemiconductorsIC TRANS RF LDMOS
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 500:$53.4970
A2I20H060GNR1
DISTI # A2I20H060GNR1
Avnet, Inc.Power Amp Dual 2200MHz 28.9dB 15-Pin TO-270WB T/R - Tape and Reel (Alt: A2I20H060GNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 5000:$51.0900
  • 3000:$52.0900
  • 2000:$54.0900
  • 1000:$56.2900
  • 500:$58.5900
A2I20H060GNR1
DISTI # A2I20H060GNR1
Avnet, Inc.Power Amp Dual 2200MHz 28.9dB 15-Pin TO-270WB T/R (Alt: A2I20H060GNR1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel
Asia - 0
  • 25000:$50.2791
  • 12500:$51.5683
  • 5000:$52.2381
  • 2500:$52.9254
  • 1500:$54.3558
  • 1000:$55.8657
  • 500:$57.4619
A2I20H060GNR1
DISTI # 841-A2I20H060GNR1
NXP SemiconductorsRF Amplifier A2I20H060GN/FM15F///REEL 13 Q2 DP0
  • 500:$58.8500
A2I20H060GNR1
DISTI # A2I20H060GNR1
NXP SemiconductorsRF & MW POWER AMPLIFIER
RoHS: Compliant
0
  • 500:$60.3300
画像 モデル 説明
A2I20H080NR1

Mfr.#: A2I20H080NR1

OMO.#: OMO-A2I20H080NR1

RF Amplifier A2I20H080N/FM15F///REEL 13 Q2 DP
A2I20H080GNR1

Mfr.#: A2I20H080GNR1

OMO.#: OMO-A2I20H080GNR1

RF Amplifier A2I20H080GN/FM15F///REEL 13 Q2 DP
A2I20H060GNR1

Mfr.#: A2I20H060GNR1

OMO.#: OMO-A2I20H060GNR1

RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V
A2I20H060GNR1

Mfr.#: A2I20H060GNR1

OMO.#: OMO-A2I20H060GNR1-NXP-SEMICONDUCTORS

RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
A2I20H060NR1

Mfr.#: A2I20H060NR1

OMO.#: OMO-A2I20H060NR1-NXP-SEMICONDUCTORS

RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V
A2I20H080GNR1

Mfr.#: A2I20H080GNR1

OMO.#: OMO-A2I20H080GNR1-NXP-SEMICONDUCTORS

RF Amplifier AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG, 28 V
A2I20H060N:

Mfr.#: A2I20H060N:

OMO.#: OMO-A2I20H060N--1190

ブランドニューオリジナル
A2I20H080N

Mfr.#: A2I20H080N

OMO.#: OMO-A2I20H080N-1190

ブランドニューオリジナル
A2I20H080NQQ1633J

Mfr.#: A2I20H080NQQ1633J

OMO.#: OMO-A2I20H080NQQ1633J-1190

ブランドニューオリジナル
A2I20H080NR1

Mfr.#: A2I20H080NR1

OMO.#: OMO-A2I20H080NR1-NXP-SEMICONDUCTORS

AIRFAST RF LDMOS WIDEBAND INTEGR
可用性
ストック:
Available
注文中:
4000
数量を入力してください:
A2I20H060GNR1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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