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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SI4174DY-T1-GE3 DISTI # 33943416 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant | 2500 |
|
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 17A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 17A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2500In Stock |
|
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 17A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2500In Stock |
|
| SI4174DY-T1-GE3 DISTI # V36:1790_09215542 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI4174DY-T1-GE3 DISTI # V72:2272_09215542 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R RoHS: Compliant | 0 | |
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R (Alt: SI4174DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 | |
| SI4174DY-T1-GE3 DISTI # 90R9128 | Vishay Intertechnologies | MOSFET,N CHANNEL,30V,17A,SO8,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0078ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| SI4174DY-T1-GE3 DISTI # 781-SI4174DY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant | 2777 |
|
| SI4174DY-T1-GE3 | Vishay Intertechnologies | 10000 | ||
| SI4174DY-T1-GE3 DISTI # SI4174DY-T1-GE3 | Vishay Intertechnologies | Transistor: N-MOSFET,unipolar,30V,13.5A,3.2W,SO8 | 41 |
|
| SI4174DY-T1-GE3 DISTI # SI4174DY-GE3 | Vishay Intertechnologies | N-Ch 30V 17A 2,5W 0,0095R SO8 RoHS: Compliant | 350 |
|
| SI4174DYT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 17A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant | 2500 | |
| SI4174DY-T1-GE3 DISTI # 1840422 | Vishay Intertechnologies | MOSFET,N CH,30V,17A,SO8 | 0 |
|
| SI4174DY-T1-GE3 DISTI # 1840422 | Vishay Intertechnologies | MOSFET,N CH,30V,17A,SO8 RoHS: Compliant | 0 |
|
| SI4174DY-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs SO-8 | Americas - |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SI4136-F-GTR OMO.#: OMO-SI4136-F-GTR |
RF Wireless Misc WLAN Satellite Radio Synthesizer (RF1/RF2/IF), lead free |
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Mfr.#: SI4100DY-T1-E3 OMO.#: OMO-SI4100DY-T1-E3-VISHAY |
MOSFET N-CH 100V 6.8A 8-SOIC |
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Mfr.#: SI410A OMO.#: OMO-SI410A-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4113GX5-BM OMO.#: OMO-SI4113GX5-BM-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4122GM OMO.#: OMO-SI4122GM-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4133D-GT OMO.#: OMO-SI4133D-GT-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4174DY-T1-E3 OMO.#: OMO-SI4174DY-T1-E3-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4178DY-TI-GE3 OMO.#: OMO-SI4178DY-TI-GE3-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4178DY-T1-GE3-CUT TAPE |
ブランドニューオリジナル |
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Mfr.#: SI4113-D-GTR |
IC SYNTHESIZER RF1/RF2 24TSSOP |