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MHT1002NR3

MHT1002NR3
Mfr. #:
MHT1002NR3
メーカー:
NXP / Freescale
説明:
RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
ライフサイクル:
メーカー新製品
データシート:
MHT1002NR3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
MHT1002NR3 詳しくは
製品属性
属性値
メーカー：
NXP
製品カテゴリ：
RFMOSFETトランジスタ
JBoss：
Y
テクノロジー：
Si
利得：
20 dB
出力電力：
350 W
包装：
リール
動作周波数：
915 MHz
タイプ：
RFパワーMOSFET
ブランド：
NXP /フリースケール
感湿性：
はい
製品タイプ：
RFMOSFETトランジスタ
ファクトリーパックの数量：
250
サブカテゴリ：
MOSFET
パーツ番号エイリアス：
935323605528
単位重量：
0.108111 oz
Tags
MHT10, MHT1, MHT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
RF Power LDMOS Transistor for Consumer and Commercial Cooking, 915 MHz, 350 W, 48 V
***ark
RUGGED RF POWER LDMOS TRANSISTOR, HEATING AND COOKING, 915MHz, 350W CW, 50V
***W
RF Power Transistor,915 to 915 MHz, 387 W, Typ Gain in dB is 20.7 @ 915 MHz, 48 V, LDMOS, SOT1818
*** Electronic Components
RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
***et
Power LDMOS Transistor N-Channel 48V 350W 915MHz 5-Pin SMT T/R
***W
Amplifier,920 to 960 MHz, 31 W, Typ Gain in dB is 35.9 @ 940 MHz, 28 V, LDMOS, SOT1727
***et
RF Amp Module Single Power Amp 960MHz 32V 17-Pin TO-272 W T/R
*** Semiconductors SCT
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V, FM16F
***nell
RF FET, 65V, 728MHZ-960MHZ, TO-272WB; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 728MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-272WB; No.
***W
Amplifier,920 to 960 MHz, 31 W, Typ Gain in dB is 35.9 @ 940 MHz, 28 V, LDMOS, SOT1726
*** Source Electronics
RF Amp Single Power Amp 960MHz 32V 17-Pin TO-270 W T/R / IC PWR AMP RF 900MHZ TO-270-16
*** Semiconductors SCT
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V, FM16F
***nell
RF FET, 65V, 728MHZ-960MHZ, TO-270WB; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 728MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-270WB; No. of Pins: 16Pins; Operating Temperature Max: 150°C; Product Range: MW7IC930N Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***ical
RF Amp Module Single Power Amp 960MHz 32V 17-Pin TO-270 W GULL T/R
***W
Amplifier,920 to 960 MHz, 31 W, Typ Gain in dB is 35.9 @ 940 MHz, 28 V, LDMOS, SOT1723
*** Semiconductors SCT
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V, FM16
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-960 MHz, 2.5 W Avg., 28 V
***W
Amplifier,728 to 960 MHz, 26 W, Typ Gain in dB is 36.2 @ 940 MHz, 28 V, LDMOS, SOT1720
***p One Stop Global
RF Amp Module Dual Power Amp 960MHz 32V 15-Pin TO-270 W T/R
***escale Semiconductor
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-960 MHz, 2.5 W Avg., 28 V
***et
RF Amp Chip Dual Power Amplifier 960MHz 714-Pin TO-270WBG T/R
***W
Amplifier,728 to 960 MHz, 26 W, Typ Gain in dB is 36.2 @ 940 MHz, 28 V, LDMOS, SOT1720
***p One Stop Global
RF Amp Module Dual Power Amp 960MHz 32V 15-Pin TO-270 W GULL T/R
MHT1002N RF Power Transistor
Freescale's MHT1002N RF Power Transistor is a new cost-effective, solid-state RF power transistors specifically targeting 915MHz RF cooking applications. This device delivers highly efficient and controllable RF energy without performance degradation over time. This device is designed for operation in the harsh environments encountered with RF Heating (high vibration, RF mismatch, high temperatures). It is rated for continuous wave (CW) operation at high power and high frequencies. This offers superior thermal performance v.s. ceramic packaging and is available in a 50V low voltage operation. Typical applications include consumer microwave ovens, commercial RF heating and microwave oven applications, industrial heating.
モデル メーカー 説明 ストック 価格
MHT1002NR3
DISTI # MHT1002NR3-ND		NXP SemiconductorsIC RF AMP 915MHZ OM780-4
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$211.2289
MHT1002NR3
DISTI # MHT1002NR3		NXP SemiconductorsTrans MOSFET N-CH 5-Pin SMT T/R - Tape and Reel (Alt: MHT1002NR3)
RoHS: Compliant
Min Qty: 250
Container: Reel		Americas - 0
  • 250:$215.2900
  • 500:$206.7900
  • 1000:$198.7900
  • 1500:$191.4900
  • 2500:$187.8900
MHT1002NR3
DISTI # 841-MHT1002NR3		NXP SemiconductorsRF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
RoHS: Compliant		0
  • 250:$192.0400
MHT1002NR3
DISTI # MHT1002NR3		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 250:$195.6700
画像 モデル 説明
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Mfr.#: MHT1004NR3

OMO.#: OMO-MHT1004NR3

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MHT1002NR3

Mfr.#: MHT1002NR3

OMO.#: OMO-MHT1002NR3

 RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
MHT1000H

Mfr.#: MHT1000H

OMO.#: OMO-MHT1000H-1190

 ブランドニューオリジナル
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Mfr.#: MHT1001H

OMO.#: OMO-MHT1001H-1190

 ブランドニューオリジナル
MHT1004NR3

Mfr.#: MHT1004NR3

OMO.#: OMO-MHT1004NR3-NXP-SEMICONDUCTORS

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MHT1006NT1

Mfr.#: MHT1006NT1

OMO.#: OMO-MHT1006NT1-NXP-SEMICONDUCTORS

 RF MOSFET Transistors 728-2700 MHz 1.26 W Avg. 28 V
MHT1002NR3

Mfr.#: MHT1002NR3

OMO.#: OMO-MHT1002NR3-NXP-SEMICONDUCTORS

 RF MOSFET Transistors RF PWR LDMOS TRANSIS 915MHz, 350W CW,50V
可用性
ストック:
Available
注文中:
3000
数量を入力してください:
MHT1002NR3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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