TK290P60Y,RQ

TK290P60Y,RQ
Mfr. #:
TK290P60Y,RQ
メーカー:
Toshiba
説明:
MOSFET N-Ch DTMOSV 650V 100W 730pF 11.5A
ライフサイクル:
メーカー新製品
データシート:
TK290P60Y,RQ データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK290P60Y,RQ DatasheetTK290P60Y,RQ Datasheet (P4-P6)TK290P60Y,RQ Datasheet (P7-P9)TK290P60Y,RQ Datasheet (P10)
ECAD Model:
詳しくは:
TK290P60Y,RQ 詳しくは
製品属性
属性値
メーカー:
東芝
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
DPAK-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
600 V
Id-連続ドレイン電流:
11.5 A
Rds On-ドレイン-ソース抵抗:
230 mOhms
Vgs th-ゲート-ソースしきい値電圧:
3 V
Vgs-ゲート-ソース間電圧:
30 V
Qg-ゲートチャージ:
25 nC
最低動作温度:
-
最高作動温度:
+ 150 C
Pd-消費電力:
100 W
構成:
独身
チャネルモード:
強化
商標名:
DTMOSV
包装:
リール
シリーズ:
TK290P60Y
トランジスタタイプ:
1 N-Channel
ブランド:
東芝
立ち下がり時間:
8.5 ns
製品タイプ:
MOSFET
立ち上がり時間:
25 ns
ファクトリーパックの数量:
2000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
170 ns
典型的なターンオン遅延時間:
65 ns
Tags
TK290P60, TK290P, TK290, TK29, TK2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
X35 Pb-F Power Mosfet Transistor Dpak(Os) Pd=100W F=1Mhz Rohs Compliant: Yes
***et
Power MOSFET N-Channel 600V 11.5A 3-Pin DPAK T/R
***ical
Silicon N-Channel MOSFETs
DTMOS V Super Junction MOSFETs
Toshiba DTMOS V Super Junction MOSFETs are the next generation of N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOS V operates with lower EMI noise, and a 17% reduction On Resistance RDS(ON) compared to the DTMOS IV MOSFETs. The DTMOS V has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOS V Super Junction MOSFETs are ideal to improve the performance, and facilitate the design of power conversion applications. Applications that include switching power supplies, power factor correction (PFC) designs, and LED lighting. Learn More
画像 モデル 説明
ESP8266EX

Mfr.#: ESP8266EX

OMO.#: OMO-ESP8266EX

RF System on a Chip - SoC SMD IC ESP8266EX, QFN32-pin, 5*5mm
AT25PE20-SSHN-B

Mfr.#: AT25PE20-SSHN-B

OMO.#: OMO-AT25PE20-SSHN-B

NOR Flash 2Mb 1.65V-3.6V SPI 85MHz IND TEMP
AT25SF081-SSHD-T

Mfr.#: AT25SF081-SSHD-T

OMO.#: OMO-AT25SF081-SSHD-T

NOR Flash 8Mb, 2.5V, 85Mhz Serial Flash
STB18N60M6

Mfr.#: STB18N60M6

OMO.#: OMO-STB18N60M6

MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package
M74VHC1G132DFT1G

Mfr.#: M74VHC1G132DFT1G

OMO.#: OMO-M74VHC1G132DFT1G

Logic Gates 2-5.5V Single 2-Input NAND Schmitt
EMK107BB7225KA-T

Mfr.#: EMK107BB7225KA-T

OMO.#: OMO-EMK107BB7225KA-T

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 16VDC 2.2uF 10% X7R
BM71BLES1FC2-0002AA

Mfr.#: BM71BLES1FC2-0002AA

OMO.#: OMO-BM71BLES1FC2-0002AA

Bluetooth Modules (802.15.1) BT 4.2 BLE Module Shielded Ant
L-07C2N2SV6T

Mfr.#: L-07C2N2SV6T

OMO.#: OMO-L-07C2N2SV6T

Fixed Inductors 2.2nH
ESP8266EX

Mfr.#: ESP8266EX

OMO.#: OMO-ESP8266EX-ESPRESSIF-SYSTEMS

SMD IC ESP8266EX, QFN32-PIN, 5_5
STB18N60M6

Mfr.#: STB18N60M6

OMO.#: OMO-STB18N60M6-1190

N-CHANNEL 600 V, 105 MOHM TYP.,
可用性
ストック:
Available
注文中:
1988
数量を入力してください:
TK290P60Y,RQの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$1.61
$1.61
10
$1.29
$12.90
100
$1.13
$113.00
500
$0.87
$437.00
1000
$0.69
$691.00
皮切りに
Top