SCT30N120

Mfr. #:: SCT30N120
メーカー:: STMicroelectronics
説明:: MOSFET N-CH 1200V 45A HIP247
ライフサイクル:: メーカー新製品
データシート:: SCT30N120 データシート
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詳しくは:: SCT30N120 詳しくは SCT30N120 Product Details

製品属性
属性値

メーカー: ST

製品カテゴリ: FET-シングル

シリーズ: SiCMOSFET

包装: チューブ

単位重量: 1.340411 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-247-3

テクノロジー: SiC

作動温度: -55°C ~ 200°C (TJ)

取付タイプ: スルーホール

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: HiP247

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 270W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 1200V (1.2kV)

入力-静電容量-Ciss-Vds: 1700pF @ 400V

FET機能: 炭化ケイ素（SiC）

Current-Continuous-Drain-Id-25°C: 40A (Tc)

Rds-On-Max-Id-Vgs: 100 mOhm @ 20A, 20V

Vgs-th-Max-Id: 2.6V @ 1mA (Typ)

ゲートチャージ-Qg-Vgs: 105nC @ 20V

Pd-電力損失: 270 W

最高作動温度: + 200 C

最低作動温度: - 55 C

立ち下がり時間: 28 ns

立ち上がり時間: 20 ns

Vgs-Gate-Source-Voltage: - 10 V/+ 25 V

Id-連続-ドレイン-電流: 45 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 1200 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.6 V

Rds-On-Drain-Source-Resistance: 80 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 45 ns

典型的なターンオン遅延時間: 19 ns

Qg-Gate-Charge: 105 nC

Tags: SCT30N, SCT30, SCT3, SCT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SCT30N120 説明

***icroelectronics: Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package

***ure Electronics: Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247

***ark: Mosfet, N Ch, 1.2Kv, 40A, Hip247-3; Mosfet Configuration:single; Transistor Polarity:n Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.08Ohm; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes

SCT30N120 詳しくは

SCT30N120 Silicon Carbide Power MOSFET: STMicroelectronics SCT30N120 Silicon Carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device's housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Silicon Carbide Power MOSFETs: STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.

Market price

モデル	メーカー	説明	ストック	価格
SCT30N120 DISTI # 32450096	STMicroelectronics	Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube RoHS: Compliant	780	250:$27.0900 100:$27.4860 50:$27.9270 30:$28.6830
SCT30N120 DISTI # 497-14960-ND	STMicroelectronics	MOSFET N-CH 1200V 45A HIP247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	120:$25.8818 30:$28.6340 1:$32.1500
SCT30N120 DISTI # V99:2348_17706747	STMicroelectronics	Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube RoHS: Compliant	0
SCT30N120 DISTI # V36:1790_06556385	STMicroelectronics	Trans MOSFET N-CH SiC 1.2KV 45A 3-Pin HIP-247 Tube RoHS: Compliant	0
SCT30N120D2 DISTI # V36:1790_17718182	STMicroelectronics	SCT30N120D2	0
SCT30N120 DISTI # SCT30N120	STMicroelectronics	Trans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€36.3900 5:€30.1500 10:€27.0300 50:€24.9500 100:€23.2900
SCT30N120 DISTI # SCT30N120	STMicroelectronics	Trans MOSFET N-CH 1200V 45A 3-Pin HiP247 Tube (Alt: SCT30N120) RoHS: Compliant Min Qty: 600 Container: Tube	Asia - 0	600:$19.6667 1200:$18.7302 1800:$17.8788 3000:$17.1014 6000:$16.3889 15000:$15.9459 30000:$15.5263
SCT30N120D2 DISTI # SCT30N120D2	STMicroelectronics	STMSCT30N120D2 (Alt: SCT30N120D2) RoHS: Compliant Min Qty: 1	Europe - 0	1:€19.1900 10:€17.6900 25:€16.7900 50:€16.2900 100:€16.1900 500:€15.9900 1000:€15.7900
SCT30N120 DISTI # 94X2608	STMicroelectronics	MOSFET, N CH, 1.2KV, 40A, HIP247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes	0	250:$29.0400 100:$29.4700 50:$29.9500 25:$30.7600 10:$31.6600 5:$32.6700 1:$33.7200
SCT30N120D2 DISTI # 65AC6290	STMicroelectronics	PTD WBG & POWER RF	0	1:$14.7500
SCT30N120H DISTI # 59AC7247	STMicroelectronics	PTD WBG & POWER RF	0	1:$14.7500
SCT30N120	STMicroelectronics	Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247 RoHS: Compliant	1114Tube	1:$25.4800 5:$23.9200 25:$22.4500
SCT30N120 DISTI # 511-SCT30N120	STMicroelectronics	MOSFET 1200V silicon carbide MOSFET RoHS: Compliant	0	1:$26.8200 5:$26.5400 10:$24.7400 25:$23.6300 100:$21.1200 250:$20.1500
SCT30N120D2 DISTI # 511-SCT30N120D2	STMicroelectronics	MOSFET	0	490:$17.1100
SCT30N120H DISTI # 511-SCT30N120H	STMicroelectronics	MOSFET	0	1000:$14.1700
SCT30N120 DISTI # TMOSP11114	STMicroelectronics	SiC-N 1200V 45A 80mOhm HiP247-3	Stock DE - 0Stock HK - 0Stock US - 0	600:$34.5300
SCT30N120H DISTI # TMOS2202	STMicroelectronics	SiC-N 1200V 45A 80mOhm H2PAK-2	Stock DE - 0Stock HK - 0Stock US - 0	1000:$18.8700
SCT30N120 DISTI # 2451116	STMicroelectronics	MOSFET, N CH, 1.2KV, 40A, HIP247-3 RoHS: Compliant	0	100:£20.4000 50:£20.6200 10:£20.8500 5:£21.0700 1:£21.2900
SCT30N120 DISTI # XSFP00000005955	STMicroelectronics	Power Field-EffectTransistor,N-Channel,Metal-oxideSemiconductor FET RoHS: Compliant	1802 in Stock0 on Order	1802:$46.3300 30:$50.9600
SCT30N120 DISTI # 2451116	STMicroelectronics	MOSFET, N CH, 1.2KV, 40A, HIP247-3 RoHS: Compliant	0	10:$37.2800 5:$40.0000 1:$40.4200

画像	モデル	説明
	Mfr.#: SCT3022KLGC11 OMO.#: OMO-SCT3022KLGC11	MOSFET Nch 1200V 95A SiC TO-247N
	Mfr.#: SCT3060ALHRC11 OMO.#: OMO-SCT3060ALHRC11	MOSFET 650V 39A 165W SIC 60mOhm TO-247N
	Mfr.#: SCT3105KLHRC11 OMO.#: OMO-SCT3105KLHRC11	MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
	Mfr.#: SCT3030ALGC11 OMO.#: OMO-SCT3030ALGC11	MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
	Mfr.#: SCT3017ALGC11 OMO.#: OMO-SCT3017ALGC11-1190	MOSFET, N-CH, 650V, 118A, 175DEG C, 427W, Transistor Polarity:N Channel, Continuous Drain Current Id:118A, Drain Source Voltage Vds:650V, On Resistance Rds(on):0.017ohm, Rds(on) Test Voltage Vgs:
	Mfr.#: SCT3080KLGC11 OMO.#: OMO-SCT3080KLGC11-ROHM-SEMI	MOSFET NCH 1.2KV 31A TO247N
	Mfr.#: SCT3-32.768KHZ OMO.#: OMO-SCT3-32-768KHZ-1190	ブランドニューオリジナル
	Mfr.#: SCT3604 OMO.#: OMO-SCT3604-1190	ブランドニューオリジナル
	Mfr.#: SCT38318PG06 OMO.#: OMO-SCT38318PG06-1190	ブランドニューオリジナル
	Mfr.#: SCT3040KLHRC11 OMO.#: OMO-SCT3040KLHRC11-ROHM-SEMI	AUTOMOTIVE GRADE N-CHANNEL SIC P

SCT30N120

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes