CSD25211W1015

Mfr. #:: CSD25211W1015
説明:: MOSFET P-CH 20V 3.2A 6DSBGA
ライフサイクル:: メーカー新製品
データシート:: CSD25211W1015 データシート
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詳しくは:: CSD25211W1015 詳しくは CSD25211W1015 Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: CSD25211W1015

包装: リール

単位重量: 0.000060 oz

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: DSBGA-6

テクノロジー: Si

チャネル数: 1 Channel

構成: シングルチャンネル

トランジスタタイプ: 1 P-Channel

Pd-電力損失: 1 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 14.2 ns

立ち上がり時間: 8.8 ns

Vgs-Gate-Source-Voltage: - 6 V

Id-連続-ドレイン-電流: - 3.2 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 20 V

Vgs-th-Gate-Source-Threshold-Voltage: - 800 mV

Rds-On-Drain-Source-Resistance: 33 mOhms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 36.9 ns

典型的なターンオン遅延時間: 13.6 ns

Qg-Gate-Charge: 3.4 nC

フォワード-相互コンダクタンス-最小: 12 S

Tags: CSD252, CSD25, CSD2, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD25211W1015 説明

***as Instruments: -20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection 6-DSBGA -55 to 150

***et: Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R

CSD25211W1015 詳しくは

NexFET P-Channel Power MOSFETs: OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.

TI P-Channel MOSFETs - 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD25211W1015 DISTI # 296-36578-1-ND	MOSFET P-CH 20V 3.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8375In Stock	1000:$0.2311 500:$0.2991 100:$0.4079 10:$0.5440 1:$0.6500
CSD25211W1015 DISTI # 296-36578-6-ND	MOSFET P-CH 20V 3.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8375In Stock	1000:$0.2311 500:$0.2991 100:$0.4079 10:$0.5440 1:$0.6500
CSD25211W1015 DISTI # 296-36578-2-ND	MOSFET P-CH 20V 3.2A 6DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.1782 6000:$0.1914 3000:$0.2046
CSD25211W1015 DISTI # CSD25211W1015	Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R (Alt: CSD25211W1015) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
CSD25211W1015 DISTI # CSD25211W1015	Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD25211W1015) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1739 6000:$0.1649 12000:$0.1599 18000:$0.1539 30000:$0.1499
CSD25211W1015	P-Channel NexFET&#153,Power MOSFET	5730	1000:$0.1400 750:$0.1500 500:$0.1900 250:$0.2300 100:$0.2500 25:$0.3000 10:$0.3200 1:$0.3600
CSD25211W1015 DISTI # 595-CSD25211W1015	MOSFET PCh NexFET Power MOSFET RoHS: Compliant	786	1:$0.5200 10:$0.4300 100:$0.2640 1000:$0.2040 3000:$0.1740

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