EMD5DXV6T5G

Mfr. #:: EMD5DXV6T5G
メーカー:: ON Semiconductor
説明:: Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
ライフサイクル:: メーカー新製品
データシート:: EMD5DXV6T5G データシート
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製品属性
属性値

メーカー: オン・セミコンダクター

製品カテゴリ: トランジスタ（BJT）-アレイ、プリバイアス

シリーズ: EMD5DXV6

包装: テープ＆リール（TR）

単位重量: 0.000099 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: SOT-563, SOT-666

取付タイプ: 表面実装

サプライヤー-デバイス-パッケージ: SOT-563

構成: デュアル

パワーマックス: 500mW

トランジスタタイプ: 1 NPN, 1 PNP - Pre-Biased (Dual)

Current-Collector-Ic-Max: 100mA

電圧-コレクタ-エミッタ-故障-最大: 50V

抵抗器-ベース-R1-オーム: 4.7k, 47k

抵抗-エミッタ-ベース-R2-オーム: 10k, 47k

DC-電流-ゲイン-hFE-Min-Ic-Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V

Vce-Saturation-Max-Ib-Ic: 250mV @ 300μA, 10mA

Current-Collector-Cutoff-Max: 500nA

周波数遷移: -

Pd-電力損失: 357 mW

最高作動温度: + 150 C

最低作動温度: - 55 C

コレクター-エミッター-電圧-VCEO-マックス: 50 V

トランジスタ-極性: NPNPNP

連続-コレクタ-電流: 0.1 A

DC-コレクター-ベース-ゲイン-hfe-Min: 80

標準入力抵抗: 47 kOhms at NPN 4.7 kOhms at PNP

標準-抵抗-比率: 1 at NPN 0.47 at PNP

ピーク-DC-コレクター-電流: 100 mA

Tags: EMD5D, EMD5, EMD

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

EMD5DXV6T5G 説明

***et Europe: Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R

***Semiconductor: Complementary Bipolar Digital Transistor (BRT)

***i-Key: TRANS PREBIAS NPN/PNP SOT563

***ark: Brt Transistor, 50V, 10K/4.7Kohm, Sot553; Digital Transistor Polarity:npn And Pnp Complement; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:4.7Kohm; Rf Transistor Case:- Rohs Compliant: Yes

Market price

モデル	メーカー	説明	ストック	価格
EMD5DXV6T5G DISTI # EMD5DXV6T5G-ND	ON Semiconductor	TRANS PREBIAS NPN/PNP SOT563 RoHS: Compliant Min Qty: 8000 Container: Tape & Reel (TR)	Temporarily Out of Stock	8000:$0.0977
EMD5DXV6T5G DISTI # EMD5DXV6T5G	ON Semiconductor	Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R (Alt: EMD5DXV6T5G) RoHS: Compliant Min Qty: 8000 Container: Tape and Reel	Europe - 0	80000:€0.0849 48000:€0.0899 32000:€0.1009 16000:€0.1109 8000:€0.1469
EMD5DXV6T5G DISTI # EMD5DXV6T5G	ON Semiconductor	Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R - Bulk (Alt: EMD5DXV6T5G) RoHS: Compliant Min Qty: 3572 Container: Bulk	Americas - 0	35720:$0.0859 17860:$0.0879 10716:$0.0889 7144:$0.0899 3572:$0.0909
EMD5DXV6T5G DISTI # EMD5DXV6T5G	ON Semiconductor	Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: EMD5DXV6T5G) RoHS: Compliant Min Qty: 8000 Container: Reel	Americas - 0	80000:$0.0739 48000:$0.0749 32000:$0.0759 16000:$0.0769 8000:$0.0779
EMD5DXV6T5G DISTI # 41K9766	ON Semiconductor	BRT TRANSISTOR, 50V, 10K/4.7KOHM, SOT553,Digital Transistor Polarity:NPN and PNP Complement,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:4.7kohm,RF Transistor Case:- RoHS Compliant: Yes	0	30000:$0.0780 18000:$0.0860 12000:$0.0930 6000:$0.1040 3000:$0.1190 1:$0.1260
EMD5DXV6T5G DISTI # 863-EMD5DXV6T5G	ON Semiconductor	Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital RoHS: Compliant	8000	1:$0.3500 10:$0.2660 100:$0.1440 1000:$0.1080 2500:$0.0930 8000:$0.0870 24000:$0.0800 48000:$0.0770 96000:$0.0740
EMD5DXV6T5G	ON Semiconductor	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon RoHS: Compliant	1424000	1000:$0.0900 100:$0.1000 500:$0.1000 1:$0.1100 25:$0.1100

画像	モデル	説明
	Mfr.#: EMD5DXV6T5G OMO.#: OMO-EMD5DXV6T5G	Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
	Mfr.#: EMD5DXV6T1G OMO.#: OMO-EMD5DXV6T1G	Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
	Mfr.#: EMD5DXV6T1 OMO.#: OMO-EMD5DXV6T1-ON-SEMICONDUCTOR	TRANS PREBIAS NPN/PNP SOT563
	Mfr.#: EMD5DXV6T1G OMO.#: OMO-EMD5DXV6T1G-ON-SEMICONDUCTOR	TRANS PREBIAS NPN/PNP SOT563
	Mfr.#: EMD5DXV6T5G OMO.#: OMO-EMD5DXV6T5G-ON-SEMICONDUCTOR	Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital

EMD5DXV6T5G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes