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MRF6V14300HSR5

MRF6V14300HSR5
Mfr. #:
MRF6V14300HSR5
メーカー:
NXP / Freescale
説明:
RF MOSFET Transistors VHV6 1400MHZ 50V
ライフサイクル:
メーカー新製品
データシート:
MRF6V14300HSR5 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー：
NXP
製品カテゴリ：
RFMOSFETトランジスタ
JBoss：
Y
トランジスタの極性：
Nチャネル
テクノロジー：
Si
Vds-ドレイン-ソース間降伏電圧：
100 V
利得：
18 dB
出力電力：
39.6 W
最高作動温度：
+ 150 C
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
NI-780S
包装：
リール
構成：
独身
動作周波数：
1.2 GHz to 1.4 GHz
シリーズ：
MRF6V14300H
タイプ：
RFパワーMOSFET
ブランド：
NXP /フリースケール
製品タイプ：
RFMOSFETトランジスタ
ファクトリーパックの数量：
50
サブカテゴリ：
MOSFET
Vgs-ゲート-ソース間電圧：
10 V
Vgs th-ゲート-ソースしきい値電圧：
2.4 V
パーツ番号エイリアス：
935313405178
単位重量：
0.115448 oz
Tags
MRF6V14300HS, MRF6V14300H, MRF6V14, MRF6V1, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V
***W
RF Power Transistor,1200 to 1400 MHz, 330 W, Typ Gain in dB is 18 @ 1400 MHz, 50 V, LDMOS, SOT1793
*** Electronic Components
RF MOSFET Transistors VHV6 1400MHZ 50V
***or
RF POWER FIELD-EFFECT TRANSISTOR
***ark
VHV6 1400MHZ 300W 50V NI780S ROHS COMPLIANT: YES
***ical
Trans RF FET N-CH 3-Pin NI-780S T/R
***(Formerly Allied Electronics)
IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223
***eco
Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3
*** Source Electronics
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223
***nsix Microsemi
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
***hard Electronics
Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V
***ure Electronics
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
***ical
Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 100V, 4.3A, TO-252AA
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No
***W
RF Power Transistor,960 to 1400 MHz, 10 W, Typ Gain in dB is 25 @ 1090 MHz, 50 V, LDMOS, SOT1811
*** Semiconductors SCT
Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V, PLD4L
***et
Transistor RF FET N-CH 100V 960MHz to 1400MHz 3-Pin PLD-1.5 T/R
*** Electronic Components
RF MOSFET Transistors VHV6 10W PULSE PLD1.5
***nell
RF FET, 100V, 960MHZ-1.4GHZ, PLD-1.5; Drain Source Voltage Vds: 100V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 960MHz; Operating Frequency Max: 1.4GHz; RF Transistor Case: PLD-1.5; No. of Pins: -; Operating Temperature Max: 200°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***et
Trans MOSFET N-CH 100V 41A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
ON SEMICONDUCTOR MAX809TTRG Microprocessor Support, Active-Low, Push-Pull Reset, 1V-5.5Vin, SOT-23-3
***ponent Stockers USA
41 A 100 V 0.039 ohm N-CHANNEL Si POWER MOSFET
***peria
N-channel TrenchMOS logic level FET
***ical
Trans RF MOSFET N-CH 100V 42A 5-Pin CDFM Bulk
***i-Key
TRANS LDMOS SOT1121B
モデル メーカー 説明 ストック 価格
MRF6V14300HSR5
DISTI # 25967739		NXP SemiconductorsTrans RF MOSFET N-CH 3-Pin NI-780S T/R21
  • 1:$602.3100
MRF6V14300HSR5
DISTI # MRF6V14300HSR5-ND		NXP SemiconductorsFET RF 100V 1.4GHZ NI780S
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$321.3930
MRF6V14300HSR5
DISTI # MRF6V14300HSR5		Avnet, Inc.Trans MOSFET N-CH 100V 3-Pin NI-780S T/R - Tape and Reel (Alt: MRF6V14300HSR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 0
  • 50:$320.1900
  • 100:$307.5900
  • 200:$295.5900
  • 300:$284.8900
  • 500:$279.3900
MRF6V14300HSR5Freescale SemiconductorRF Power Field-Effect Transistor
RoHS: Compliant		393
  • 1000:$289.0500
  • 500:$304.2700
  • 100:$316.7700
  • 25:$330.3500
  • 1:$355.7600
MRF6V14300HSR5
DISTI # 841-MRF6V14300HSR5		NXP SemiconductorsRF MOSFET Transistors VHV6 1400MHZ 50V
RoHS: Compliant		0
  • 1:$300.9400
  • 5:$296.3100
  • 10:$291.9000
  • 25:$285.6000
  • 50:$281.2100
MRF6V14300HSR5
DISTI # MRF6V14300HSR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		0
  • 50:$280.0900
画像 モデル 説明
MRF6V14300HSR5

Mfr.#: MRF6V14300HSR5

OMO.#: OMO-MRF6V14300HSR5

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V14300HR5

Mfr.#: MRF6V14300HR5

OMO.#: OMO-MRF6V14300HR5

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V14300HR3

Mfr.#: MRF6V14300HR3

OMO.#: OMO-MRF6V14300HR3

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V14300HR3

Mfr.#: MRF6V14300HR3

OMO.#: OMO-MRF6V14300HR3-NXP-SEMICONDUCTORS

 FET RF 100V 1.4GHZ NI780
MRF6V14300HS

Mfr.#: MRF6V14300HS

OMO.#: OMO-MRF6V14300HS-1152

 FET RF 100V 1.4GHZ NI780S
MRF6V14300HSR3

Mfr.#: MRF6V14300HSR3

OMO.#: OMO-MRF6V14300HSR3-NXP-SEMICONDUCTORS

 FET RF 100V 1.4GHZ NI780S
MRF6V14300MSR5

Mfr.#: MRF6V14300MSR5

OMO.#: OMO-MRF6V14300MSR5-1190

 ブランドニューオリジナル
MRF6V14300HSR5

Mfr.#: MRF6V14300HSR5

OMO.#: OMO-MRF6V14300HSR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 1400MHZ 50V
MRF6V14300HR5

Mfr.#: MRF6V14300HR5

OMO.#: OMO-MRF6V14300HR5-NXP-SEMICONDUCTORS

 RF MOSFET Transistors VHV6 1400MHZ 50V
可用性
ストック:
Available
注文中:
1500
数量を入力してください:
MRF6V14300HSR5の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$300.94
$300.94
5
$296.31
$1 481.55
10
$291.90
$2 919.00
25
$285.60
$7 140.00
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