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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SEMIX151GD12E4S DISTI # 77R2104 | SEMIKRON | IGBT MODULE, SIX, 1.2KV, 232A,Transistor Polarity:Six NPN,DC Collector Current:232A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:- RoHS Compliant: Yes | 0 |
|
| SEMIX151GD12E4S DISTI # 71042379 | SEMIKRON | SEMIX,Trench IGBT Module,1200V,200A RoHS: Compliant | 0 |
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| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SEMIX151GB12E4V4 OMO.#: OMO-SEMIX151GB12E4V4-1190 |
ブランドニューオリジナル |
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Mfr.#: SEMIX151GB12T4S OMO.#: OMO-SEMIX151GB12T4S-1190 |
Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel |
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Mfr.#: SEMIX151GD126HDS OMO.#: OMO-SEMIX151GD126HDS-1190 |
SEMIX, Trench IGBT Module, 1200V, 100A |
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Mfr.#: SEMIX151GD128DS OMO.#: OMO-SEMIX151GD128DS-1190 |
ブランドニューオリジナル |
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Mfr.#: SEMIX151GD12E4S OMO.#: OMO-SEMIX151GD12E4S-1190 |
IGBT MODULE, SIX, 1.2KV, 232A, Transistor Polarity:Six NPN, DC Collector Current:232A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce |