IPS135N03L G

Mfr. #:: IPS135N03L G
メーカー:: infineon
説明:: IGBT Transistors MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3
ライフサイクル:: メーカー新製品
データシート:: IPS135N03L G データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: インフィニオン

製品カテゴリ: FET-シングル

シリーズ: OptiMOS 3

包装: チューブ

パーツエイリアス: IPS135N03LGAKMA1 SP000788220

単位重量: 0.139332 oz

取り付けスタイル: スルーホール

商標名: OptiMOS

パッケージ-ケース: IPAK-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 31 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 2 ns

立ち上がり時間: 3 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 30 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 13.5 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 12 ns

典型的なターンオン遅延時間: 3 ns

チャネルモード: 強化

Tags: IPS135N03LG, IPS135, IPS13, IPS1, IPS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPS135N03L G 説明

***et Europe: Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251

***ponent Stockers USA: 30 A 30 V 0.0135 ohm N-CHANNEL Si POWER MOSFET TO-251

***nell: MOSFET, N CH, 30A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0113ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 31W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V

***-Wing Technology: Tube Through Hole N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 35A 1.92W 21.4ns

***ser: MOSFETs- Power and Small Signal NFET 30V 35A 15MOHM

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes

***emi: Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK

***Yang: Trans MOSFET N-CH 30V 8.5A 3-Pin(3+Tab) IPAK Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 6.9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes

***emi: Power MOSFET 25V 62A 10.5 mOhm Single N-Channel DPAK

***Yang: Trans MOSFET N-CH 25V 32A 3-Pin(3+Tab) IPAK Rail - Rail/Tube

***ser: MOSFETs- Power and Small Signal 25V 62A N-Channel

***r Electronics: Power Field-Effect Transistor, 32A I(D), 25V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***S: French Electronic Distributor since 1988

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:62A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):10.5mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:58W ;RoHS Compliant: Yes

Market price

モデル	メーカー	説明	ストック	価格
IPS135N03LGAKMA1 DISTI # IPS135N03LGAKMA1-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO251-3 RoHS: Compliant Min Qty: 1500 Container: Tube	Limited Supply - Call
IPS135N03L G DISTI # 726-IPS135N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3 RoHS: Compliant	0
IPS135N03LG	Infineon Technologies AG	Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS: Compliant	2861	1000:$0.1800 100:$0.1900 500:$0.1900 25:$0.2000 1:$0.2200

画像	モデル	説明
	Mfr.#: IPS135N03L OMO.#: OMO-IPS135N03L-1190	ブランドニューオリジナル
	Mfr.#: IPS135N03LG OMO.#: OMO-IPS135N03LG-1190	Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
	Mfr.#: IPS135N03LGAKMA1 OMO.#: OMO-IPS135N03LGAKMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 30A TO251-3
	Mfr.#: IPS135N03L G OMO.#: OMO-IPS135N03L-G-126	IGBT Transistors MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3

IPS135N03L G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes