SKP10N60

SKP10N60
Mfr. #:
SKP10N60
メーカー:
INF
説明:
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
ライフサイクル:
メーカー新製品
データシート:
SKP10N60 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー
INF
製品カテゴリ
IGBT-シングル
Tags
SKP10N6, SKP10N, SKP10, SKP1, SKP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, FAST; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.4V; Power Dissipation Pd: 92W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tempe
***ark
IGBT, FAST; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:20A; Voltage, Vce Sat Max:2.4V; Power Dissipation:92W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter ;RoHS Compliant: Yes
***ment14 APAC
IGBT, FAST; DC Collector Current:20A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:92W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; Current Ic @ Vce Sat:10A; Current Ic Continuous a Max:20A; Current Temperature:25°C; Device Marking:SKP10N60; Fall Time tf:29ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220; Pin Format:1G, 2C, 3E; Power Dissipation Max:92W; Power Dissipation Pd:92W; Power Dissipation Ptot Max:92W; Pulsed Current Icm:40A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
モデル メーカー 説明 ストック 価格
SKP10N60AXKSA1
DISTI # SKP10N60AXKSA1-ND
Infineon Technologies AGIGBT 600V 20A 92W TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    SKP10N60A
    DISTI # 726-SKP10N60A
    Infineon Technologies AGIGBT Transistors FAST IGBT NPT TECH 600V 10A
    RoHS: Compliant
    0
      SKP10N60AXKSA1
      DISTI # N/A
      Infineon Technologies AGIGBT Transistors IGBT PRODUCTS0
        SKP10N60Infineon Technologies AGInsulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        RoHS: Compliant
        69958
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          ブランドニューオリジナル
          可用性
          ストック:
          Available
          注文中:
          3000
          数量を入力してください:
          SKP10N60の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
          参考価格(USD)
          単価
          小計金額
          1
          $0.00
          $0.00
          10
          $0.00
          $0.00
          100
          $0.00
          $0.00
          500
          $0.00
          $0.00
          1000
          $0.00
          $0.00
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