AS4C8M32MD2A-25BCNTR

AS4C8M32MD2A-25BCNTR
Mfr. #:
AS4C8M32MD2A-25BCNTR
メーカー:
Alliance Memory
説明:
DRAM 256M 1.2/1.8V 8Mx32 LPDDR2 -25C-95C
ライフサイクル:
メーカー新製品
データシート:
AS4C8M32MD2A-25BCNTR データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
AS4C8M32MD2A-25BCNTR 詳しくは
製品属性
属性値
メーカー:
アライアンスメモリー
製品カテゴリ:
DRAM
JBoss:
Y
タイプ:
SDRAM Mobile - LPDDR2
データバス幅:
32 bit
組織:
8 M x 32
パッケージ/ケース:
FBGA-134
メモリー容量:
256 Mbit
最大クロック周波数:
400 MHz
供給電圧-最大:
1.95 V
供給電圧-最小:
1.14 V
供給電流-最大:
140 mA
最低動作温度:
- 25 C
最高作動温度:
+ 85 C
シリーズ:
AS4C8M32MD2A-25
包装:
リール
ブランド:
アライアンスメモリー
取り付けスタイル:
SMD / SMT
感湿性:
はい
製品タイプ:
DRAM
ファクトリーパックの数量:
1000
サブカテゴリ:
メモリとデータストレージ
Tags
AS4C8M32MD, AS4C8M32M, AS4C8M3, AS4C8, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR2 SDRAM
Alliance Memory DDR2 SDRAM is designed to comply with DDR2 SDRAM key features. Features such as posted CAS# with additive latency, Write latency=Read latency -1 and On-Die Termination (ODT). All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in RAS #, CAS# multiplexing style.
Low-Power DDR2 SDRAM
Alliance Memory Low-Power DDR2 SDRAM are high-speed CMOS and dynamic-access memory that are internally configured as a 8-bank memory device. These DDR2 SDRAM feature 4-bit pre-fetch DDR architecture, programmable READ and WRITE latencies, auto Temperature Compensated Self Refresh (TCSR), and clock stop capability. The DDR2 SDRAM reduces the number of input pins in the system by using a double data rate architecture on the Command/Address (CA) bus. This CA bus is used to transmit address, command, and bank information. These DDR2 SDRAM can achieve high-speed operation by using a double data rate architecture on the DQ (bidirectional/differential data bus) pins.
画像 モデル 説明
AS4C8M32MD2A-25BCNTR

Mfr.#: AS4C8M32MD2A-25BCNTR

OMO.#: OMO-AS4C8M32MD2A-25BCNTR

DRAM 256M 1.2/1.8V 8Mx32 LPDDR2 -25C-95C
AS4C8M32MD2A-25BPCN

Mfr.#: AS4C8M32MD2A-25BPCN

OMO.#: OMO-AS4C8M32MD2A-25BPCN

DRAM 256M 1.2/1.8V 32Mx32 Mobile DDR2 E-Temp
AS4C8M32MD2A-25BCN

Mfr.#: AS4C8M32MD2A-25BCN

OMO.#: OMO-AS4C8M32MD2A-25BCN

DRAM 256M 1.2/1.8V 400MHz 8Mx32 LPDDR2 E-Temp
AS4C8M32MD2A-25BPCN

Mfr.#: AS4C8M32MD2A-25BPCN

OMO.#: OMO-AS4C8M32MD2A-25BPCN-1190

256M 8M X 32 LPDDR2 1.2V 168 POP Extended temp
AS4C8M32MD2A-25BCN

Mfr.#: AS4C8M32MD2A-25BCN

OMO.#: OMO-AS4C8M32MD2A-25BCN-ALLIANCE-MEMORY

134-BALL FBGA (10X11.5X1.0)
可用性
ストック:
Available
注文中:
3500
数量を入力してください:
AS4C8M32MD2A-25BCNTRの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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