2SK3490-TD-E

Mfr. #:: 2SK3490-TD-E
メーカー:: Rochester Electronics, LLC
説明:: Silicon MOSFET N Channel Enhancement 30V 8A 3-Pin Surface Mount - Bulk (Alt: 2SK3490-TD-E)
ライフサイクル:: メーカー新製品
データシート:: 2SK3490-TD-E データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

Tags: 2SK349, 2SK34, 2SK3, 2SK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK3490-TD-E 説明

***et: Silicon MOSFET N Channel Enhancement 30V 8A 3-Pin Surface Mount

***i-Key Marketplace: N-CHANNEL SILICON MOSFET FOR GEN

***nell: MOSFET, N CH 30V 8A SOT89; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:30V; Cont Current Id:8A; On State Resistance:0.039ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:2.6V; Case Style:PCP; Termination Type:SMD; Power Dissipation:3.5W; Transistor Case Style:PCP

***(Formerly Allied Electronics): MOSFET, Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -7A,SO-8,PD 1.5W,VGS+/-20V,-55C

***ure Electronics: Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8

***enic: 30V 11.4A 2.5W 24m´Î@10V9.1A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***el Electronic: MICROCHIP - 24AA025E48-I/SN - EEPROM, einzigartige EUI-48™-Node-Adresse, 2 Kbit, 2 Blöcke (128 x 8 Bit), Seriell I2C (2-Draht)

***ark: P Channel Mosfet,-30V,-8.1A, Soic-8; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

***ark: Mosfet Transistor, P Channel, -10 A, -30 V, 20 Mohm, 10 V, -1 V

***itex: Transistor: P-MOSFET; unipolar; -30V; -10A; 0.02ohm; 2.5W; -55+150 deg.C; SMD; SO8

***ure Electronics: Single P-Channel 30 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***nell: MOSFET, P, -30V, -10A, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -10A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power D

*** Stop Electro: Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ure Electronics: Single P-Channel 30 V 13.3 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8

***(Formerly Allied Electronics): MOSFET, P-CHANNEL, -30V, -9.2A, 19.4 MOHM, 25VGS, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ment14 APAC: MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.2A; Source Voltage Vds:-30V; On Resistance

***ineon: Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side

***roFlash: Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.2A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0133ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: Single N-Channel 30 V 0.022 Ohm 57 nC HEXFET® Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC Tube

***roFlash: Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: N CHANNEL MOSFET, 30V, 8.5A, SOIC; Trans; N CHANNEL MOSFET, 30V, 8.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; No. of Pins:8

***ure Electronics: N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***Yang: Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled

***emi: P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ

***ure Electronics: P-Channel 30 V 20 mO Surface Mount PowerTrench Mosfet - SOIC-8

***-Wing Technology: ON SEMICONDUCTOR - FDS4435BZ - P CHANNEL MOSFET, -30V, 8.8A, SOIC

***rchild Semiconductor: This P–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Market price

モデル	メーカー	説明	ストック	価格
2SK3490-TD-E DISTI # 2SK3490-TD-E	ON Semiconductor	Silicon MOSFET N Channel Enhancement 30V 8A 3-Pin Surface Mount - Bulk (Alt: 2SK3490-TD-E) RoHS: Not Compliant Min Qty: 834 Container: Bulk	Americas - 0	8340:$0.3699 4170:$0.3789 2502:$0.3839 1668:$0.3889 834:$0.3919
2SK3490-TD-E	SANYO Semiconductor Co Ltd	RoHS: Not Compliant	126	1000:$0.4000 500:$0.4200 100:$0.4300 25:$0.4500 1:$0.4900

画像	モデル	説明
	Mfr.#: 2SK3490-TD-E OMO.#: OMO-2SK3490-TD-E-1190	Silicon MOSFET N Channel Enhancement 30V 8A 3-Pin Surface Mount - Bulk (Alt: 2SK3490-TD-E)
	Mfr.#: 2SK3491 OMO.#: OMO-2SK3491-1190	ブランドニューオリジナル
	Mfr.#: 2SK3491,K3491 OMO.#: OMO-2SK3491-K3491-1190	ブランドニューオリジナル
	Mfr.#: 2SK3491-E OMO.#: OMO-2SK3491-E-1190	- Bulk (Alt: 2SK3491-E)
	Mfr.#: 2SK3491-TL-E OMO.#: OMO-2SK3491-TL-E-1190	- Bulk (Alt: 2SK3491-TL-E)
	Mfr.#: 2SK3491-TLD OMO.#: OMO-2SK3491-TLD-1190	ブランドニューオリジナル
	Mfr.#: 2SK3495-AZ OMO.#: OMO-2SK3495-AZ-1190	- Bulk (Alt: 2SK3495-AZ)
	Mfr.#: 2SK3497(F) OMO.#: OMO-2SK3497-F--1190	ブランドニューオリジナル
	Mfr.#: 2SK3498 OMO.#: OMO-2SK3498-1190	ブランドニューオリジナル
	Mfr.#: 2SK3499 OMO.#: OMO-2SK3499-1190	ブランドニューオリジナル

2SK3490-TD-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes