SI8489EDB-T2-E1

Name: Vishay - SI8489EDB-T2-E1
Brand: Vishay
SKU: OMO-2826759
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8489EDB-T2-E1
メーカー:: Vishay
説明:: IGBT Transistors MOSFET -20V 44mOhm@10V 5.4A P-Ch G-III
ライフサイクル:: メーカー新製品
データシート:: SI8489EDB-T2-E1 データシート
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詳しくは:: SI8489EDB-T2-E1 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

商標名: MICROFOOT TrenchFET

パッケージ-ケース: 4-UFBGA

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 4-Microfoot

構成: 独身

FETタイプ: MOSFET Pチャネル、金属酸化物

パワーマックス: 780mW

トランジスタタイプ: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

入力-静電容量-Ciss-Vds: 765pF @ 10V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: -

Rds-On-Max-Id-Vgs: 44 mOhm @ 1.5A, 10V

Vgs-th-Max-Id: 1.2V @ 250μA

ゲートチャージ-Qg-Vgs: 27nC @ 10V

Pd-電力損失: 900 mW

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 25 ns

立ち上がり時間: 20 ns

Vgs-Gate-Source-Voltage: 12 V

Id-連続-ドレイン-電流: - 700 mA

Vds-ドレイン-ソース-ブレークダウン-電圧: - 20 V

Vgs-th-Gate-Source-Threshold-Voltage: - 0.5 V to - 1.2 V

Rds-On-Drain-Source-Resistance: 44 mOhms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 50 ns

典型的なターンオン遅延時間: 27 ns

Qg-Gate-Charge: 9.5 nC

フォワード-相互コンダクタンス-最小: 10 S

Tags: SI848, SI84, SI8

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8489EDB-T2-E1 説明

***ied Electronics & Automation: SI8489EDB-T2-E1 P-channel MOSFET Transistor; 4.3 A; 20 V; 4-Pin MICRO FOOT

***et: Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R

***ronik: P-CH 20V 5,4A 36mOhm MICROFOOT

SI8489EDB-T2-E1 詳しくは

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

モデル	メーカー	説明	ストック	価格
SI8489EDB-T2-E1 DISTI # V72:2272_09216538	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R RoHS: Compliant	4770	3000:$0.1492 1000:$0.1535 500:$0.1906 250:$0.2240 100:$0.2266 25:$0.2848 10:$0.2883 1:$0.3521
SI8489EDB-T2-E1 DISTI # SI8489EDB-T2-E1TR-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1749
SI8489EDB-T2-E1 DISTI # SI8489EDB-T2-E1CT-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1976 500:$0.2557 100:$0.3487 10:$0.4650 1:$0.5500
SI8489EDB-T2-E1 DISTI # SI8489EDB-T2-E1DKR-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1976 500:$0.2557 100:$0.3487 10:$0.4650 1:$0.5500
SI8489EDB-T2-E1 DISTI # 30195830	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R RoHS: Compliant	4770	3000:$0.1492 1000:$0.1535 500:$0.1906 250:$0.2240 100:$0.2266 49:$0.2848
SI8489EDB-T2-E1 DISTI # SI8489EDB-T2-E1	Vishay Intertechnologies	Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8489EDB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1489 6000:$0.1439 12000:$0.1389 18000:$0.1349 30000:$0.1309
SI8489EDB-T2-E1 DISTI # 70617010	Vishay Siliconix	SI8489EDB-T2-E1 P-channel MOSFET Transistor,4.3 A,20 V,4-Pin MICRO FOOT RoHS: Compliant	0	300:$0.2900 600:$0.2600 1500:$0.2300 3000:$0.2100
SI8489EDB-T2-E1 DISTI # 78-SI8489EDB-T2-E1	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1 RoHS: Compliant	12622	1:$0.4900 10:$0.3710 100:$0.2750 500:$0.2260 1000:$0.1750 3000:$0.1710
SI8489EDB-T2-E1 DISTI # 8181438P	Vishay Intertechnologies	TRANS MOSFET P-CH 20V 5.4A, RL	2940	60:£0.2550 200:£0.2440 400:£0.2220 800:£0.2010
SI8489EDB-T2-E1 DISTI # C1S803604064229	Vishay Intertechnologies	MOSFETs	4770	250:$0.2240 100:$0.2266 25:$0.2848 10:$0.2883
SI8489EDB-T2-E1	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1 RoHS: Compliant	Americas - 6000

SI8489EDB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes