ZXMN3F31DN8TA

Mfr. #:: ZXMN3F31DN8TA
メーカー:: Diodes Incorporated
説明:: IGBT Transistors MOSFET 30V Dual N-channel Enhance. Mode MOSFET
ライフサイクル:: メーカー新製品
データシート:: ZXMN3F31DN8TA データシート
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詳しくは:: ZXMN3F31DN8TA 詳しくは

製品属性
属性値

メーカー: 組み込まれたダイオード

製品カテゴリ: ICチップ

シリーズ: ZXMN3

包装: Digi-ReelR代替パッケージ

単位重量: 0.002610 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 8-SO

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 1.8W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 608pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 5.7A

Rds-On-Max-Id-Vgs: 24 mOhm @ 7A, 10V

Vgs-th-Max-Id: 3V @ 250μA

ゲートチャージ-Qg-Vgs: 12.9nC @ 10V

Pd-電力損失: 2.1 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 8 ns

立ち上がり時間: 3.3 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 7.3 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 24 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 16 ns

典型的なターンオン遅延時間: 2.9 ns

チャネルモード: 強化

Tags: ZXMN3F31, ZXMN3F, ZXMN3, ZXMN, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMN3F31DN8TA 詳しくは

Power MOSFETs: Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

ZXMN2x & ZXMN3x MOSFETs: Diodes Incorporated ZXMN2x and ZXMN3x MOSFETs are offered in is offered in compact S0-8 and SOT23 packages. These MOSFETs are ideal for a range of space-starved switching and power management applications, such as external switches in buck/boost PoL converters, in which PCB footprint, thermal performance, and low threshold voltage are highly important.

Market price

モデル	メーカー	説明	ストック	価格
ZXMN3F31DN8TA DISTI # V72:2272_06708095	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 7.3A Automotive 8-Pin SO T/R RoHS: Compliant	500	500:$0.4351 250:$0.4352 100:$0.4353 25:$0.6671 10:$0.6674 1:$0.8072
ZXMN3F31DN8TA DISTI # 1034-ZXMN3F31DN8CT-ND	Diodes Incorporated	MOSFET 2N-CH 30V 5.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1488In Stock	100:$0.6306 10:$0.8230 1:$0.9300
ZXMN3F31DN8TA DISTI # 1034-ZXMN3F31DN8DKR-ND	Diodes Incorporated	MOSFET 2N-CH 30V 5.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1488In Stock	100:$0.6306 10:$0.8230 1:$0.9300
ZXMN3F31DN8TA DISTI # 1034-ZXMN3F31DN8TR-ND	Diodes Incorporated	MOSFET 2N-CH 30V 5.7A 8SOIC RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	1000In Stock	500:$0.4840
ZXMN3F31DN8TA DISTI # ZXMN3F31DN8CT-ND	Diodes Incorporated	MOSFET 2N-CH 30V 5.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	942In Stock	100:$0.6730 10:$0.8720 1:$1.0000
ZXMN3F31DN8TA DISTI # ZXMN3F31DN8DKR-ND	Diodes Incorporated	MOSFET 2N-CH 30V 5.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	942In Stock	100:$0.6730 10:$0.8720 1:$1.0000
ZXMN3F31DN8TA DISTI # ZXMN3F31DN8TR-ND	Diodes Incorporated	MOSFET 2N-CH 30V 5.7A 8SOIC RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	500In Stock	500:$0.4840
ZXMN3F31DN8TA DISTI # 25757541	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 7.3A Automotive 8-Pin SO T/R RoHS: Compliant	500	500:$0.4351 250:$0.4352 100:$0.4353 25:$0.6671 23:$0.6674
ZXMN3F31DN8TA DISTI # ZXMN3F31DN8TA	Diodes Incorporated	Trans MOSFET N-CH 30V 7.3A 8-Pin SO T/R - Tape and Reel (Alt: ZXMN3F31DN8TA) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$0.3309 1000:$0.3149 2000:$0.2999 3000:$0.2869 5000:$0.2799
ZXMN3F31DN8TA DISTI # ZXMN3F31DN8TA	Diodes Incorporated	Trans MOSFET N-CH 30V 7.3A 8-Pin SO T/R (Alt: ZXMN3F31DN8TA) RoHS: Compliant Min Qty: 500 Container: Tape and Reel	Europe - 0	500:€0.3279 1000:€0.3119 2000:€0.3069 3000:€0.3019 5000:€0.2889
ZXMN3F31DN8TA DISTI # 522-ZXMN3F31DN8TA	Diodes Incorporated	MOSFET 30V Dual N-channel Enhance. Mode MOSFET RoHS: Compliant	1220	1:$0.8200 10:$0.6820 100:$0.4400 500:$0.4400 1000:$0.3520
ZXMN3F31DN8TA	Zetex / Diodes Inc		81621

画像	モデル	説明
	Mfr.#: ZXMN3F31DN8TA OMO.#: OMO-ZXMN3F31DN8TA	MOSFET 30V Dual N-channel Enhance. Mode MOSFET
	Mfr.#: ZXMN3F30FGTA OMO.#: OMO-ZXMN3F30FGTA-1190	DIIZXMN3F30FGTA (Alt: ZXMN3F30FGTA)
	Mfr.#: ZXMN3F318DN8TA OMO.#: OMO-ZXMN3F318DN8TA-1190	ブランドニューオリジナル
	Mfr.#: ZXMN3F31DN8TC OMO.#: OMO-ZXMN3F31DN8TC-1190	ブランドニューオリジナル
	Mfr.#: ZXMN3F30FHTA-CUT TAPE OMO.#: OMO-ZXMN3F30FHTA-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: ZXMN3F31DN8TA OMO.#: OMO-ZXMN3F31DN8TA-DIODES	IGBT Transistors MOSFET 30V Dual N-channel Enhance. Mode MOSFET
	Mfr.#: ZXMN3F30FHTA OMO.#: OMO-ZXMN3F30FHTA-DIODES	IGBT Transistors MOSFET 30V N-Channel Enhance. Mode MOSFET

ZXMN3F31DN8TA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes