IXFN80N60P3

IXFN80N60P3
Mfr. #:
IXFN80N60P3
メーカー:
Littelfuse
説明:
MOSFET Polar3 HiPerFET Power MOSFET
ライフサイクル:
メーカー新製品
データシート:
IXFN80N60P3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN80N60P3 DatasheetIXFN80N60P3 Datasheet (P4-P5)
ECAD Model:
詳しくは:
IXFN80N60P3 詳しくは
製品属性
属性値
メーカー:
IXYS
製品カテゴリ:
MOSFET
テクノロジー:
Si
取り付けスタイル:
シャーシマウント
パッケージ/ケース:
SOT-227-4
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
600 V
Id-連続ドレイン電流:
66 A
Rds On-ドレイン-ソース抵抗:
70 mOhms
商標名:
HiPerFET
包装:
チューブ
シリーズ:
IXFN80N60
ブランド:
IXYS
製品タイプ:
MOSFET
ファクトリーパックの数量:
10
サブカテゴリ:
MOSFET
単位重量:
1.058219 oz
Tags
IXFN80, IXFN8, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 66A 4-Pin SOT-227B
***nell
MOSFET, N-CH, 600V, 66A, SOT-227B; Transistor Polarity: N Channel; Continuous Drain Current Id: 66A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.077ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 960W; Transistor Case Style: SOT-227B; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: Polar3 HiperFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 66 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Threshold Voltage V = 5 / Gate-Source Voltage V = 30 / Power Dissipation (Pd) W = 960 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Fall Time ns = 8 / Rise Time ns = 25 / Turn-OFF Delay Time ns = 87 / Turn-ON Delay Time ns = 48 / Package Type = SOT-227B / Mounting Type = SMD / Packaging = Tube
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
モデル メーカー 説明 ストック 価格
IXFN80N60P3
DISTI # IXFN80N60P3-ND
IXYS CorporationMOSFET N-CH 600V 66A SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube
20In Stock
  • 100:$18.4228
  • 10:$21.5710
  • 1:$23.3200
IXFN80N60P3
DISTI # C1S331700083072
IXYS CorporationTrans MOSFET N-CH 600V 66A 4-Pin SOT-227B
RoHS: Compliant
20
  • 10:$24.2000
  • 5:$26.3000
  • 1:$32.0000
IXFN80N60P3
DISTI # 34AC1886
IXYS CorporationMOSFET, N-CH, 600V, 66A, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:66A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes20
  • 1:$23.3200
  • 5:$22.1500
  • 10:$21.5700
  • 25:$19.8200
  • 50:$18.9800
  • 100:$18.4300
  • 250:$16.9100
IXFN80N60P3
DISTI # 747-IXFN80N60P3
IXYS CorporationMOSFET Polar3 HiPerFET Power MOSFET8
  • 1:$21.2000
  • 5:$20.1400
  • 10:$19.6100
  • 25:$18.0200
  • 50:$17.2500
  • 100:$16.7500
  • 200:$15.3700
  • 500:$14.6300
IXFN80N60P3
DISTI # 8047603
IXYS CorporationMOSFET 600V 66A POLAR3 HIPERFET SOT227B, EA22
  • 1:£15.8600
  • 5:£14.2700
  • 10:£13.6400
  • 25:£13.1600
IXFN80N60P3
DISTI # 2782974
IXYS CorporationMOSFET, N-CH, 600V, 66A, SOT-227B
RoHS: Compliant
20
  • 1:$29.6500
  • 5:$29.0900
  • 10:$27.5300
  • 50:$26.5900
  • 100:$25.7000
  • 250:$25.2800
IXFN80N60P3
DISTI # 2782974
IXYS CorporationMOSFET, N-CH, 600V, 66A, SOT-227B
RoHS: Compliant
26
  • 1:£16.6800
  • 5:£15.8500
  • 10:£14.1800
  • 50:£13.5700
  • 100:£12.0800
画像 モデル 説明
PFS7529H

Mfr.#: PFS7529H

OMO.#: OMO-PFS7529H

Power Factor Correction - PFC 450 W peak power 90 VAC CCM PFC
SZ1SMB5.0AT3G

Mfr.#: SZ1SMB5.0AT3G

OMO.#: OMO-SZ1SMB5-0AT3G

TVS Diodes / ESD Suppressors 5V 600W UNI-DIR SZ1SMB AEC-Q101
NSR0530P2T5G

Mfr.#: NSR0530P2T5G

OMO.#: OMO-NSR0530P2T5G

Schottky Diodes & Rectifiers 30V SCHOTTKY DIODE
C3M0120090J-TR

Mfr.#: C3M0120090J-TR

OMO.#: OMO-C3M0120090J-TR

MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm
SZ1SMB5.0AT3G

Mfr.#: SZ1SMB5.0AT3G

OMO.#: OMO-SZ1SMB5-0AT3G-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors ZEN SMB TVS 600W SPCL TR
TAJC476K010RNJ

Mfr.#: TAJC476K010RNJ

OMO.#: OMO-TAJC476K010RNJ-AVX

Tantalum Capacitors - Solid SMD 10volts 47uF 10%
0900BL15C050E

Mfr.#: 0900BL15C050E

OMO.#: OMO-0900BL15C050E-JOHANSON-TECHNOLOGY

Signal Conditioning 900MHz 1:1 BALUN
ACM7060-701-2PL-TL01

Mfr.#: ACM7060-701-2PL-TL01

OMO.#: OMO-ACM7060-701-2PL-TL01-TDK

Common Mode Filters / Chokes 700ohms 100MHz 50volts
C3M0120090J-TR

Mfr.#: C3M0120090J-TR

OMO.#: OMO-C3M0120090J-TR-WOLFSPEED

900V, 120 MOHM, G3 SIC MOSFET
12065C225K4T2A

Mfr.#: 12065C225K4T2A

OMO.#: OMO-12065C225K4T2A-AVX

Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 2.2uF 10%
可用性
ストック:
20
注文中:
2003
数量を入力してください:
IXFN80N60P3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$21.20
$21.20
5
$20.14
$100.70
10
$19.61
$196.10
25
$18.02
$450.50
50
$17.25
$862.50
100
$16.75
$1 675.00
200
$15.37
$3 074.00
500
$14.63
$7 315.00
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