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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SI2312BDS-T1-GE3 DISTI # V72:2272_09216793 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 181 |
|
| SI2312BDS-T1-GE3 DISTI # V36:1790_09216793 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 0 |
|
| SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 3.9A SOT23-3 Min Qty: 1 Container: Cut Tape (CT) | 125574In Stock |
|
| SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 3.9A SOT23-3 Min Qty: 1 Container: Digi-Reel® | 125574In Stock |
|
| SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 3.9A SOT23-3 Min Qty: 3000 Container: Tape & Reel (TR) | 123000In Stock |
|
| SI2312BDS-T1-GE3 DISTI # 34757283 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 9000 |
|
| SI2312BDS-T1-GE3 DISTI # 32142891 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 181 |
|
| SI2312BDS-T1-GE3 DISTI # 30601987 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant | 49 |
|
| SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: SI2312BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 3000 |
|
| SI2312BDS-T1-GE3 DISTI # SI2312BDS-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 3000 |
|
| SI2312BDS-T1-GE3. DISTI # 16AC0252 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No RoHS: Not Compliant | 3000 |
|
| SI2312BDS-T1-GE3 DISTI # 16P3709 | Vishay Intertechnologies | N CHANNEL MOSFET, 20V, 5A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV,MSL:- RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SI2312BDS-T1-GE3 DISTI # 781-SI2312BDS-T1-GE3 | Vishay Intertechnologies | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant | 7316 |
|
| SI2312BDS-T1-GE3 | Vishay Intertechnologies | Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant Min Qty: 1 | 6030Cut Tape/Mini-Reel |
|
| SI2312BDS-T1-GE3 | Vishay Intertechnologies | Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant Min Qty: 3000 | 6000Reel |
|
| SI2312BDS-T1-GE3 | Vishay Intertechnologies | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant | Americas - 3000 | |
| SI2312BDST1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS: Compliant | Europe - 45000 | |
| SI2312BDS-T1-GE3 DISTI # C1S803605191265 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Container: Cut Tape | 49 |
|
| SI2312BDS-T1-GE3 DISTI # XSFP00000063435 | Vishay Siliconix | Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant | 102000 in Stock0 on Order |
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| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SI2313BDS-T1-GE3 OMO.#: OMO-SI2313BDS-T1-GE3-1190 |
ブランドニューオリジナル |