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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSC889N03MSGATMA1 DISTI # BSC889N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC889N03MSGATMA1 DISTI # BSC889N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC889N03MSGATMA1 DISTI # BSC889N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC889N03MS G DISTI # 726-BSC889N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 12A TDSON-8 RoHS: Compliant | 0 | |
| BSC889N03MSG | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 15000 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BSC889N03LS OMO.#: OMO-BSC889N03LS-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSC889N03LS G OMO.#: OMO-BSC889N03LS-G-1190 |
MOSFET N-Ch 30V 13A TDSON-8 |
|
|
Mfr.#: BSC889N03LSG OMO.#: OMO-BSC889N03LSG-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC889N03LSG E8178 OMO.#: OMO-BSC889N03LSG-E8178-1190 |
ブランドニューオリジナル |
|
Mfr.#: BSC889N03LSGATMA1 |
MOSFET N-CH 30V 45A TDSON-8 |
|
|
Mfr.#: BSC889N03LSGE8178 OMO.#: OMO-BSC889N03LSGE8178-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSC889N03MS OMO.#: OMO-BSC889N03MS-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSC889N03MS G OMO.#: OMO-BSC889N03MS-G-1190 |
MOSFET N-Ch 30V 12A TDSON-8 |
|
|
Mfr.#: BSC889N03MSG OMO.#: OMO-BSC889N03MSG-1190 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC889N03MSGATMA1 |
MOSFET N-CH 30V 44A TDSON-8 |
