SI4662DY-T1-E3

SI4662DY-T1-E3
Mfr. #:
SI4662DY-T1-E3
メーカー:
Vishay / Siliconix
説明:
RF Bipolar Transistors MOSFET 30V 18.6A 6.25W
ライフサイクル:
メーカー新製品
データシート:
SI4662DY-T1-E3 データシート
配達:
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支払い:
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ECAD Model:
詳しくは:
SI4662DY-T1-E3 詳しくは
製品属性
属性値
メーカー
ビシェイ
製品カテゴリ
ICチップ
包装
リール
パーツエイリアス
SI4662DY-E3
単位重量
0.006596 oz
取り付けスタイル
SMD / SMT
パッケージ-ケース
SOIC-Narrow-8
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
3 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
15 ns
立ち上がり時間
50 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
12.9 A
Vds-ドレイン-ソース-ブレークダウン-電圧
30 V
Rds-On-Drain-Source-Resistance
10 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
26 ns
典型的なターンオン遅延時間
21 ns
チャネルモード
強化
Tags
SI4662, SI466, SI46, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
モデル メーカー 説明 ストック 価格
SI4662DY-T1-E3
DISTI # 781-SI4662DY-E3
Vishay IntertechnologiesMOSFET 30V 18.6A 6.25W
RoHS: Compliant
0
  • 2500:$0.4200
  • 5000:$0.3990
  • 10000:$0.3850
画像 モデル 説明
SI4662DY-T1-E3

Mfr.#: SI4662DY-T1-E3

OMO.#: OMO-SI4662DY-T1-E3

MOSFET 30V 18.6A 6.25W
SI4662DY-T1-GE3

Mfr.#: SI4662DY-T1-GE3

OMO.#: OMO-SI4662DY-T1-GE3

MOSFET 30V 18.6A 6.25W 10mohm @ 10V
SI4662DY-T1-GE3

Mfr.#: SI4662DY-T1-GE3

OMO.#: OMO-SI4662DY-T1-GE3-317

RF Bipolar Transistors MOSFET 30V 18.6A 6.25W 10mohm @ 10V
SI4662DY-T1-E3

Mfr.#: SI4662DY-T1-E3

OMO.#: OMO-SI4662DY-T1-E3-317

RF Bipolar Transistors MOSFET 30V 18.6A 6.25W
SI4662DY-T1-E3 GE3

Mfr.#: SI4662DY-T1-E3 GE3

OMO.#: OMO-SI4662DY-T1-E3-GE3-1190

ブランドニューオリジナル
可用性
ストック:
Available
注文中:
2500
数量を入力してください:
SI4662DY-T1-E3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$0.58
$0.58
10
$0.55
$5.49
100
$0.52
$51.98
500
$0.49
$245.45
1000
$0.46
$462.00
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