SIHB35N60EF-GE3

SIHB35N60EF-GE3
Mfr. #:
SIHB35N60EF-GE3
メーカー:
Vishay
説明:
EF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V
ライフサイクル:
メーカー新製品
データシート:
SIHB35N60EF-GE3 データシート
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ECAD Model:
詳しくは:
SIHB35N60EF-GE3 詳しくは
製品属性
属性値
Tags
SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
モデル メーカー 説明 ストック 価格
SIHB35N60EF-GE3
DISTI # V99:2348_22712078
Vishay IntertechnologiesEF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V850
  • 1000:$3.1420
  • 500:$3.7050
  • 100:$4.3430
  • 10:$5.3300
  • 1:$7.0510
SIHB35N60EF-GE3
DISTI # SIHB35N60EF-GE3-ND
Vishay SiliconixMOSFET N-CH D2PAK TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk
1045In Stock
  • 2500:$3.2399
  • 1000:$3.4104
  • 500:$4.0438
  • 100:$4.7502
  • 10:$5.7980
  • 1:$6.4600
SIHB35N60EF-GE3
DISTI # 32868259
Vishay IntertechnologiesEF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V850
  • 1000:$3.1420
  • 500:$3.7050
  • 100:$4.3430
  • 10:$5.3300
  • 2:$7.0510
SIHB35N60EF-GE3
DISTI # SIHB35N60EF-GE3
Vishay Intertechnologies(Alt: SIHB35N60EF-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€2.5900
  • 500:€2.6900
  • 50:€2.7900
  • 100:€2.7900
  • 25:€3.0900
  • 10:€3.7900
  • 1:€4.8900
SIHB35N60EF-GE3
DISTI # SIHB35N60EF-GE3
Vishay Intertechnologies- Tape and Reel (Alt: SIHB35N60EF-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$2.8900
  • 6000:$2.9900
  • 4000:$3.0900
  • 2000:$3.1900
  • 1000:$3.2900
SIHB35N60EF-GE3
DISTI # 99AC9553
Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:32A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.084ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes50
  • 500:$3.8900
  • 250:$4.3300
  • 100:$4.4700
  • 50:$4.7900
  • 25:$5.1100
  • 10:$5.4300
  • 1:$6.5500
SIHB35N60EF-GE3
DISTI # 78-SIHB35N60EF-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
1050
  • 1:$6.4900
  • 10:$5.3800
  • 100:$4.4300
  • 250:$4.2900
  • 500:$3.8500
  • 1000:$3.2400
  • 2500:$3.0800
SIHB35N60EF-GE3
DISTI # 3019078
Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-263
RoHS: Compliant
50
  • 1000:$4.1200
  • 500:$4.5300
  • 250:$5.0800
  • 100:$5.3200
  • 10:$6.3700
  • 1:$8.1700
SIHB35N60EF-GE3
DISTI # 3019078
Vishay IntertechnologiesMOSFET, N-CH, 32A, 600V, TO-26350
  • 500:£2.7900
  • 250:£3.1200
  • 100:£3.2100
  • 10:£3.9000
  • 1:£5.1800
画像 モデル 説明
SIHB35N60EF-GE3

Mfr.#: SIHB35N60EF-GE3

OMO.#: OMO-SIHB35N60EF-GE3

MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB35N60E-GE3

Mfr.#: SIHB35N60E-GE3

OMO.#: OMO-SIHB35N60E-GE3-VISHAY

MOSFET N-CH 600V 32A D2PAK TO263
SIHB35N60EF-GE3

Mfr.#: SIHB35N60EF-GE3

OMO.#: OMO-SIHB35N60EF-GE3-VISHAY

EF Series Power MOSFET with Fast Body Diode D2PAK (TO-263), 97 m @ 10V
可用性
ストック:
Available
注文中:
4000
数量を入力してください:
SIHB35N60EF-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$0.00
$0.00
10
$0.00
$0.00
100
$0.00
$0.00
500
$0.00
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1000
$0.00
$0.00
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