SI7904BDN-T1-E3

Mfr. #:: SI7904BDN-T1-E3
メーカー:: Vishay
説明:: MOSFET 2N-CH 20V 6A 1212-8
ライフサイクル:: メーカー新製品
データシート:: SI7904BDN-T1-E3 データシート
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製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-アレイ

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI7904BDN-E3

取り付けスタイル: SMD / SMT

パッケージ-ケース: PowerPAKR 1212-8 Dual

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR 1212-8 Dual

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 17.8W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 20V

入力-静電容量-Ciss-Vds: 860pF @ 10V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 6A

Rds-On-Max-Id-Vgs: 30 mOhm @ 7.1A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

ゲートチャージ-Qg-Vgs: 24nC @ 8V

Pd-電力損失: 2.5 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 6 ns 5 ns

立ち上がり時間: 60 ns 15 ns

Vgs-Gate-Source-Voltage: 8 V

Id-連続-ドレイン-電流: 6 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 20 V

Rds-On-Drain-Source-Resistance: 30 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 25 ns

典型的なターンオン遅延時間: 7 ns 5 ns

チャネルモード: 強化

Tags: SI7904BDN-T1, SI7904BDN-T, SI7904BD, SI7904B, SI7904, SI790, SI79, SI7

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

モデル	メーカー	説明	ストック	価格
SI7904BDN-T1-E3 DISTI # V72:2272_09216405	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2610	1000:$0.5248 500:$0.5402 250:$0.6002 100:$0.6669 25:$0.7753 10:$0.8843 1:$1.0154
SI7904BDN-T1-E3 DISTI # SI7904BDN-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2965In Stock	1000:$0.5420 500:$0.6865 100:$0.8852 10:$1.1200 1:$1.2600
SI7904BDN-T1-E3 DISTI # SI7904BDN-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2965In Stock	1000:$0.5420 500:$0.6865 100:$0.8852 10:$1.1200 1:$1.2600
SI7904BDN-T1-E3 DISTI # SI7904BDN-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.4911
SI7904BDN-T1-E3 DISTI # 28952724	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2610	1000:$0.5248 500:$0.5402 250:$0.6002 100:$0.6669 25:$0.7753 14:$0.8843
SI7904BDN-T1-E3 DISTI # SI7904BDN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Cut TR (SOS) (Alt: SI7904BDN-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 1900	1:$0.8749 30:$0.7319 75:$0.6729 150:$0.6079 375:$0.5869 750:$0.5849 1500:$0.5829
SI7904BDN-T1-E3 DISTI # SI7904BDN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R (Alt: SI7904BDN-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.0559 6000:€0.7569 12000:€0.6139 18000:€0.5429 30000:€0.5199
SI7904BDN-T1-E3 DISTI # SI7904BDN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7904BDN-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5529 6000:$0.5359 12000:$0.5139 18000:$0.4999 30000:$0.4869
SI7904BDN-T1-E3 DISTI # 75M5570	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: 75M5570) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	1:$0.6260
SI7904BDN-T1-E3 DISTI # 75M5570	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 20V POWERPAK, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):45mohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes	3000	1:$0.6260 3000:$0.6260
SI7904BDN-T1-E3. DISTI # 16AC0271	Vishay Intertechnologies	Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):45mohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V,Power Dissipation Pd:2.5W,No. of Pins:8Pins , RoHS Compliant: No	0	1:$0.6260 3000:$0.6260
SI7904BDN-T1-E3 DISTI # 781-SI7904BDN-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs PowerPAK 1212-8 RoHS: Compliant	2677	1:$1.3100 10:$1.0800 100:$0.8230 500:$0.7080 1000:$0.5590 3000:$0.5220
SI7904BDN-T1-E3	Vishay Intertechnologies		44
SI7904BDN-T1-E3	Vishay Intertechnologies	6 A, 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET	2993	1601:$0.4400 358:$0.5000 1:$1.6000
SI7904BDN-T1-E3	Vishay Intertechnologies	6 A, 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET	425	358:$0.5000 64:$0.5600 1:$1.6000
SI7904BDNT1E3	Vishay Intertechnologies	RoHS: Compliant	Europe - 6000
SI7904BDN-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs PowerPAK 1212-8	Americas -
SI7904BDN-T1-E3 DISTI # C1S803601298481	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2610	250:$0.5981 100:$0.6645 25:$0.7548 10:$0.8842

画像	モデル	説明
	Mfr.#: SI7904BDN-T1-GE3 OMO.#: OMO-SI7904BDN-T1-GE3	MOSFET 20V Vds 8V Vgs PowerPAK 1212-8
	Mfr.#: SI7904BDN-T1-E3-CUT TAPE OMO.#: OMO-SI7904BDN-T1-E3-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: SI7904B-G E3 OMO.#: OMO-SI7904B-G-E3-1190	ブランドニューオリジナル
	Mfr.#: SI7904BDN-T1-E3 OMO.#: OMO-SI7904BDN-T1-E3-VISHAY	MOSFET 2N-CH 20V 6A 1212-8
	Mfr.#: SI7904BDN-T1-GE3 OMO.#: OMO-SI7904BDN-T1-GE3-VISHAY	MOSFET 2N-CH 20V 6A PPAK 1212-8
	Mfr.#: SI7904BDN-TI OMO.#: OMO-SI7904BDN-TI-1190	ブランドニューオリジナル
	Mfr.#: SI7904BDNT1E3 OMO.#: OMO-SI7904BDNT1E3-1190	Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI7904BDN-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes