RF1S30P06SM

RF1S30P06SM
Mfr. #:
RF1S30P06SM
メーカー:
Rochester Electronics, LLC
説明:
Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ライフサイクル:
メーカー新製品
データシート:
RF1S30P06SM データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
RF1S30P06S, RF1S30P06, RF1S30P, RF1S30, RF1S3, RF1S, RF1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
モデル メーカー 説明 ストック 価格
RF1S30P06SM9A
DISTI # 512-RF1S30P06SM9A
ON SemiconductorMOSFET -60V Single
RoHS: Not compliant
0
    RF1S30P06SM9AFairchild Semiconductor CorporationPower Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant
    8000
    • 1000:$2.0400
    • 500:$2.1500
    • 100:$2.2400
    • 25:$2.3300
    • 1:$2.5100
    RF1S30P06SMHarris SemiconductorPower Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant
    14500
    • 1000:$2.0400
    • 500:$2.1500
    • 100:$2.2400
    • 25:$2.3300
    • 1:$2.5100
    RF1S30P06SM9AHarris SemiconductorPower Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant
    800
    • 1000:$1.1300
    • 500:$1.1900
    • 100:$1.2400
    • 25:$1.2900
    • 1:$1.3900
    RF1S30P06SMHarris Semiconductor 9
      画像 モデル 説明
      RF1S30N06LE

      Mfr.#: RF1S30N06LE

      OMO.#: OMO-RF1S30N06LE-1190

      Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RF1S30N06LESM

      Mfr.#: RF1S30N06LESM

      OMO.#: OMO-RF1S30N06LESM-1190

      ブランドニューオリジナル
      RF1S30N06LESM9A

      Mfr.#: RF1S30N06LESM9A

      OMO.#: OMO-RF1S30N06LESM9A-1190

      Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RF1S30N06LESM9AR4365

      Mfr.#: RF1S30N06LESM9AR4365

      OMO.#: OMO-RF1S30N06LESM9AR4365-1190

      ブランドニューオリジナル
      RF1S30P05

      Mfr.#: RF1S30P05

      OMO.#: OMO-RF1S30P05-1190

      Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RF1S30P05SM

      Mfr.#: RF1S30P05SM

      OMO.#: OMO-RF1S30P05SM-1190

      - Bulk (Alt: RF1S30P05SM)
      RF1S30P05SM9A

      Mfr.#: RF1S30P05SM9A

      OMO.#: OMO-RF1S30P05SM9A-1190

      ブランドニューオリジナル
      RF1S30P06

      Mfr.#: RF1S30P06

      OMO.#: OMO-RF1S30P06-1190

      Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
      RF1S30P06SM

      Mfr.#: RF1S30P06SM

      OMO.#: OMO-RF1S30P06SM-1190

      Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RF1S30P06SM9A

      Mfr.#: RF1S30P06SM9A

      OMO.#: OMO-RF1S30P06SM9A-1190

      MOSFET -60V Single
      可用性
      ストック:
      Available
      注文中:
      5000
      数量を入力してください:
      RF1S30P06SMの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
      $0.00
      $0.00
      皮切りに
      最新の製品
      • IO-Link™ Devices
        Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
      • Large Diameter Clear Hole Spacers
        RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
      • WE-ExB Series Common Mode Power Line Choke
        Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
      • CPI2-B1-REU Production Device Programmer
        Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
      • CFSH05-20L Schottky Diode
        Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
      Top