SI4862DY-T1-E3

Mfr. #:: SI4862DY-T1-E3
メーカー:: Vishay
説明:: RF Bipolar Transistors MOSFET 16 Volt 25 Amp 3.5W
ライフサイクル:: メーカー新製品
データシート:: SI4862DY-T1-E3 データシート
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詳しくは:: SI4862DY-T1-E3 詳しくは

製品属性
属性値

メーカー: VISHAY

製品カテゴリ: FET-シングル

包装: リール

パーツエイリアス: SI4862DY-T1

単位重量: 0.017870 oz

取り付けスタイル: SMD / SMT

商標名: TrenchFET

パッケージ-ケース: SO-8

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 1.6 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 38 ns

立ち上がり時間: 38 ns

Vgs-Gate-Source-Voltage: 8 V

Id-連続-ドレイン-電流: 17 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 16 V

Rds-On-Drain-Source-Resistance: 3.3 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 120 ns

典型的なターンオン遅延時間: 42 ns

チャネルモード: 強化

Tags: SI486, SI48, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4862DY-T1-E3 説明

***ied Electronics & Automation: MOSFET, Power,N-Ch,VDSS 16V,RDS(ON) 0.0027Ohm,ID 17A,SO-8,PD 1.6W,VGS +/-8V,-55C

***et: Trans MOSFET N-CH 16V 17A 8-Pin SOIC N T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:16V; Continuous Drain Current Id:17A; On Resistance Rds(On):0.0027Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:600Mv Rohs Compliant: Yes

SI4862DY-T1-E3 詳しくは

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

モデル	メーカー	説明	ストック	価格
SI4862DY-T1-E3 DISTI # SI4862DY-T1-E3-ND	Vishay Siliconix	MOSFET N-CH 16V 17A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$1.7556
SI4862DY-T1-E3 DISTI # SI4862DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 16V 17A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4862DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	2500:$1.6900 5000:$1.6900 10000:$1.6900 15000:$1.6900 25000:$1.6900
SI4862DY-T1-E3. DISTI # 28AC2149	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:16V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:1.6W,No. of Pins:8Pins RoHS Compliant: Yes	2500	1:$1.6000 2500:$1.6000
SI4862DY-T1-E3 DISTI # 70026114	Vishay Siliconix	MOSFET,Power,N-Ch,VDSS 16V,RDS(ON) 0.0027Ohm,ID 17A,SO-8,PD 1.6W,VGS +/-8V,-55d RoHS: Compliant	0	2500:$1.9060 5000:$1.8560 7500:$1.7360
SI4862DY-T1-E3 DISTI # 781-SI4862DY-T1-E3	Vishay Intertechnologies	MOSFET 16 Volt 25 Amp 3.5W RoHS: Compliant	0	2500:$1.6000
SI4862DY-T1-E3	Vishay Intertechnologies	MOSFET 16 Volt 25 Amp 3.5W	Americas -

画像	モデル	説明
	Mfr.#: SI4862DY-T1-E3 OMO.#: OMO-SI4862DY-T1-E3	MOSFET 16 Volt 25 Amp 3.5W
	Mfr.#: SI4862DY-T1-GE3 OMO.#: OMO-SI4862DY-T1-GE3	MOSFET 16V 25A 3.5W 3.3mohm @ 4.5V
	Mfr.#: SI4862DY-T1-E3 OMO.#: OMO-SI4862DY-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 16 Volt 25 Amp 3.5W
	Mfr.#: SI4862DY-T1-GE3 OMO.#: OMO-SI4862DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 16V 25A 3.5W 3.3mohm @ 4.5V

SI4862DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes