A2G35S160-01SR3

Mfr. #:: A2G35S160-01SR3
メーカー:: NXP / Freescale
説明:: RF Amplifier A2G35S160-01S/CFM2F///REEL 13 Q1 NDP
ライフサイクル:: メーカー新製品
データシート:: A2G35S160-01SR3 データシート
配達:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: A2G35S160-01SR3 Datasheet A2G35S160-01SR3 Datasheet (P4-P6)A2G35S160-01SR3 Datasheet (P7-P9)A2G35S160-01SR3 Datasheet (P10)
ECAD Model:
詳しくは:: A2G35S160-01SR3 詳しくは

製品属性
属性値

メーカー：: IDT（Integrated Device Technology）

製品カテゴリ：: RFアンプ

JBoss：: Y

パッケージ/ケース：: VFQFPN-32

シリーズ：: F1240

包装：: リール

ブランド：: IDT

製品タイプ：: RFアンプ

ファクトリーパックの数量：: 2500

サブカテゴリ：: ワイヤレスおよびRF集積回路

商標名：: FlatNoise

パーツ番号エイリアス：: IDTF1240

Tags: A2G3, A2G

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A2G35S160-01SR3 説明

***ark: Airfast Rf Power Gan Transistor, 3400-3800 Mhz, 32 W Avg., 48 V

***W: RF Power Transistor,3400 to 3600 MHz, 126 W, Typ Gain in dB is 15.7 @ 3500 MHz, 48 V, GaN, SOT1828

***et Europe: RF Power GaN Transistor 3400-3600MHz 32W 48V Airfast

A2G35S160-01SR3 詳しくは

NXP RF-IF Solutions: NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More

RF Power GaN Portfolio: NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.

Market price

モデル	メーカー	説明	ストック	価格
A2G35S160-01SR3 DISTI # A2G35S160-01SR3-ND	NXP Semiconductors	AIRFAST RF POWER GAN TRANSISTOR RoHS: Not compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$116.3701
A2G35S160-01SR3 DISTI # A2G35S160-01SR3	NXP Semiconductors	RF Power GaN Transistor 3400-3600MHz 32W 48V Airfast - Tape and Reel (Alt: A2G35S160-01SR3) RoHS: Compliant Min Qty: 250 Container: Reel	Americas - 0	250:$127.4900 500:$122.4900 1000:$117.6900 1500:$113.3900 2500:$111.2900
A2G35S160-01SR3 DISTI # 841-A2G35S160-01SR3	NXP Semiconductors	RF Amplifier Airfast RF Power GaN Transistor, 3400-3800 MHz, 32 W AVG., 48 V RoHS: Compliant	0	250:$131.2400
A2G35S160-01SR3 DISTI # A2G35S160-01SR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	0	250:$135.1000

A2G35S160-01SR3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes