H5N3011P-E

Mfr. #:: H5N3011P-E
メーカー:: RENESAS
説明:: Trans MOSFET N-CH 300V 88A 3-Pin(3+Tab) TO-3P Magazine
ライフサイクル:: メーカー新製品
データシート:: H5N3011P-E データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: ルネサス

製品カテゴリ: ICチップ

Tags: H5N3011P, H5N301, H5N30, H5N3, H5N

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

H5N3011P-E 説明

***ical: Trans MOSFET N-CH Si 300V 88A 3-Pin(3+Tab) TO-3P Tube

***ponent Stockers USA: 88 A 300 V 0.048 ohm N-CHANNEL Si POWER MOSFET

***egrated Device Technology: Nch Single Power Mosfet 300V 88A 48Mohm To-3P

***icroelectronics: N-Channel 30V - 0.0056Ohm - 90A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 30V 90A TO-220

***ure Electronics: Single N-Channel 30 V 150 W 47 nC Silicon Through Hole Mosfet - TO-220-3

***enic: 30V 90A 150W 6.5m´Î@10V45A 2.5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***ponent Stockers USA: 90 A 30 V 0.0065 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***r Electronics: Power Field-Effect Transistor, 90A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 100 V, 5.1 mOhm typ., 110 A STripFET F7 Power MOSFET in TO-220 package

***r Electronics: Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET, N-CH, 100V, 110A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes

***icroelectronics: N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package

***ure Electronics: Single N-Channel 55 V 150 W 126 nC Silicon Through Hole Mosfet - TO-220-3

***r Electronics: Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-220AB Tube

***ical: Trans MOSFET N-CH 55V 100A 3-Pin(3+Tab) TO-220AB Rail

***Yang: MOSFET N-CH 55V 100A TO-220 - Bulk

*** Electronic Components: MOSFET 55V N-Channel PowerTrench

***ark: RAIL / N-CH/55V 100A High Qg PT3

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 89A;TO-220AB;PD 170W;VGS +/-16V

***fin: Transistor NPN Field Effect IRL3705/IRL3705N INTERNATIONAL RECTIFIER Ampere=89 V=55 TO220

***ure Electronics: Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3

***eco: MOSFET, 55V, 77A, 10 MOHM, 65.3 NC QG, LOGIC LEVEL, TO

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 89A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:89A; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N LOGIC TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:77A; Drain Source Voltage Vds:55V; On Resistance Rds(on):10mohm; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:89A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:310A; Voltage Vgs th Max:2.5V

***ure Electronics: Single N-Channel 60 V 2.9 mOhm 56 nC OptiMOS Power Mosfet - TO-220-3

***nell: MOSFET, N CH, 60V, 100A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V;

*** Stop Electro: Power Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Market price

モデル	メーカー	説明	ストック	価格
H5N3011P-E DISTI # 30616047	Renesas Electronics Corporation	Trans MOSFET N-CH 300V 88A 3-Pin(3+Tab) TO-3P Magazine RoHS: Compliant	148	50:$4.5773 10:$4.6665 4:$6.4260
H5N3011P-E DISTI # C1S620200381952	Renesas Electronics Corporation	Trans MOSFET N-CH Si 300V 88A 3-Pin(3+Tab) TO-3P Tube RoHS: Compliant	148	50:$3.5900 10:$3.6600 1:$5.0400

画像	モデル	説明
	Mfr.#: H5N3003P OMO.#: OMO-H5N3003P-1190	ブランドニューオリジナル
	Mfr.#: H5N3003P,5N3003 OMO.#: OMO-H5N3003P-5N3003-1190	ブランドニューオリジナル
	Mfr.#: H5N3003P91-E OMO.#: OMO-H5N3003P91-E-1190	ブランドニューオリジナル
	Mfr.#: H5N3004P-E OMO.#: OMO-H5N3004P-E-1190	ブランドニューオリジナル
	Mfr.#: H5N3007CF OMO.#: OMO-H5N3007CF-1190	ブランドニューオリジナル
	Mfr.#: H5N3007LSTL-E OMO.#: OMO-H5N3007LSTL-E-1190	ブランドニューオリジナル
	Mfr.#: H5N3011 OMO.#: OMO-H5N3011-1190	ブランドニューオリジナル
	Mfr.#: H5N3011P OMO.#: OMO-H5N3011P-1190	ブランドニューオリジナル
	Mfr.#: H5N3011P-E OMO.#: OMO-H5N3011P-E-1190	Trans MOSFET N-CH 300V 88A 3-Pin(3+Tab) TO-3P Magazine
	Mfr.#: H5N3011P80 OMO.#: OMO-H5N3011P80-1190	ブランドニューオリジナル

H5N3011P-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes