CGHV60040D

Mfr. #:: CGHV60040D
メーカー:: N/A
説明:: RF JFET Transistors DC-6GHz 40W GaN 50Volt
ライフサイクル:: メーカー新製品
データシート:: CGHV60040D データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:
詳しくは:: CGHV60040D 詳しくは

製品属性
属性値

メーカー: Cree / Wolfspeed

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

包装: ジェルパック

取り付けスタイル: SMD / SMT

動作-温度-範囲: -

パッケージ-ケース: ベアダイ

テクノロジー: GaN SiC

構成: デュアル

トランジスタタイプ: HEMT

利得: 18 dB

クラス: -

出力電力: 40 W

Pd-電力損失: -

最高作動温度: -

最低作動温度: -

応用: -

動作周波数: 6 GHz

Id-連続-ドレイン-電流: 3.2 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 50 V

Vgs-th-Gate-Source-Threshold-Voltage: -

Rds-On-Drain-Source-Resistance: -

トランジスタ-極性: Nチャネル

フォワード-相互コンダクタンス-最小: -

開発キット: -

Vgs-ゲート-ソース-ブレークダウン-電圧: -

ゲート-ソース-カットオフ-電圧: -

最大ドレインゲート電圧: -

NF-雑音指数: -

P1dB-圧縮ポイント: -

Tags: CGHV600, CGHV6, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV60040D 詳しくは

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

CGHV600 6GHz GaN HEMTs: Wolfspeed CGHV600 6GHz gallium nitride (GaN) High Electron Mobility Transistors (HEMTs) provide superior performance compared with silicon (Si) or gallium arsenide (GaAs) transistors. CGHV600 GaN HEMTs offer higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. These transistors also offer greater power density and wider bandwidths. CGHV600 series devices are ideal for use in a variety of applications, including cellular infrastructure and Class A, AB, and linear amplifiers.Learn More

Market price

モデル	メーカー	説明	ストック	価格
CGHV60040D-GP4 DISTI # CGHV60040D-GP4-ND	Wolfspeed	RF MOSFET HEMT 50V DIE RoHS: Compliant Min Qty: 10 Container: Tray	550In Stock	10:$42.3360
CGHV60040D DISTI # 941-CGHV60040D	Cree, Inc.	RF JFET Transistors GaN HEMT Die DC-6.0GHz, 40 Watt RoHS: Compliant	200	10:$42.3400

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	Mfr.#: CGHV60170D-GP4 OMO.#: OMO-CGHV60170D-GP4-WOLFSPEED	RF MOSFET HEMT 50V DIE
	Mfr.#: CGHV60040D OMO.#: OMO-CGHV60040D-318	RF JFET Transistors DC-6GHz 40W GaN 50Volt
	Mfr.#: CGHV60170D OMO.#: OMO-CGHV60170D-318	RF JFET Transistors DC-6GHz 170W GaN 50Volt
	Mfr.#: CGHV60075D5 OMO.#: OMO-CGHV60075D5-318	RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V
	Mfr.#: CGHV60075D OMO.#: OMO-CGHV60075D-318	RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V