2SJ668(Q)

Mfr. #:: 2SJ668(Q)
メーカー:: Toshiba America Electronic Components
説明:
ライフサイクル:: メーカー新製品
データシート:: 2SJ668(Q) データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

Tags: 2SJ668, 2SJ66, 2SJ6, 2SJ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SJ668(Q) 説明

***ical: Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold

***(Formerly Allied Electronics): MOSFET; Dual N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 46mohm; Id 5.3; SO-8; Pd 3.1W

***et Europe: Transistor MOSFET Array Dual N-CH 60V 5.3A 8-Pin SOIC T/R

***ure Electronics: SI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8

***ark: Mosfet, Dual N Channel, 60V, 5.3A, Soic-8, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.3A; On Resistance Rds(On):0.046Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pinsrohs Compliant: No

***ment14 APAC: MOSFET, NN CH, 60V, 5.3A, 8SOIC; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):46mohm; Power Dissipation Pd:3.1W

***ponent Sense: Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3/BKN)

*** Electronics: SI7850DP-T1-E3 ; ROHS ; V ISHAY/SILICONIX ; MOSFET N-CH 60V POWERPAK 8-SOIC

***ure Electronics: Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 0.018Ohm,ID 6.2A,PowerPAK SO-8,PD 1.8W,-55C

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.8W; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.3A; Package / Case:SOIC PowerPAK; Power Dissipation Pd:1.8W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.2A; Resistance, Rds On:0.031ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:40A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:27nC; No. of Pins:8; Power Dissipation:1.8W; Power, Pd:1.8W; Power, Ptot:1.8W; Quantity, Reel:3000; Resistance, Rds on Max:0.022ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:3.3°C/W; Voltage, Vds Max:60V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:1V; Width, External:6.2mm; Width, Tape:12mm

***ure Electronics: Single N-Channel 60 V 0.022 Ohms Surface Mount Power Mosfet - SOIC-8

***th Star Micro: Transistor MOSFET N-CH 60V 6A 8-Pin SOIC N T/R

***(Formerly Allied Electronics): Power MOSFET,N-Ch,VDSS 60V,RDS(ON) 0.018Ohm,ID 6A,SO-8,PD 1.7W,VGS+/-20V,gFS 25S

***ark: N Channel Mosfet, 60V, 8.5A, Soic-8, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.5A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:3.3W Rohs Compliant: No

***ment14 APAC: MOSFET, N, 8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.7W; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:8.5A; Package / Case:SOIC; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***emi: N-Channel PowerTrench® MOSFET 60V, 6.1A, 35mΩ

***ure Electronics: N-Channel 60 V 35 mOhm SMT PowerTrench Mosfet SOIC-8

***Yang: Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***(Formerly Allied Electronics): NTTFS5116PLTAG P-channel MOSFET Transistor 20 A 60 V 8-Pin WDFN

***ure Electronics: P-Channel 60 V 52 mOhm 3.2 W Surface Mount Power MOSFET - WDFN-8

***emi: Single P-Channel Power MOSFET -60V, -20A, 52mΩ

***ark: MOSFET, P-CH, 60V, 5.7A, 175DEG C, 3.2W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***emi: P-Channel Power MOSFET, QFET®, -60 V, -5.4 A, 450 mΩ, DPAK

*** Stop Electro: Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, P-CH, -60V, -5.4A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.4A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.36ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Market price

モデル	メーカー	説明	ストック	価格
2SJ668(Q) DISTI # C1S751201084143	Toshiba America Electronic Components	Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold RoHS: Compliant	850	500:$4.2400 200:$4.3500 100:$4.6400 50:$5.1900

画像	モデル	説明
	Mfr.#: 2SJ668(TE16L1,NQ) OMO.#: OMO-2SJ668-TE16L1-NQ-	MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm
	Mfr.#: 2SJ637-E OMO.#: OMO-2SJ637-E-1190	PCH 4V DRIVE SERIES
	Mfr.#: 2SJ600(0)-Z-EJ OMO.#: OMO-2SJ600-0--Z-EJ-1190	ブランドニューオリジナル
	Mfr.#: 2SJ605-Z-E1 OMO.#: OMO-2SJ605-Z-E1-1190	ブランドニューオリジナル
	Mfr.#: 2SJ609 OMO.#: OMO-2SJ609-1190	ブランドニューオリジナル
	Mfr.#: 2SJ610 OMO.#: OMO-2SJ610-1190	ブランドニューオリジナル
	Mfr.#: 2SJ621-T1B-A OMO.#: OMO-2SJ621-T1B-A-1190	ブランドニューオリジナル
	Mfr.#: 2SJ647-T1-A OMO.#: OMO-2SJ647-T1-A-1190	Trans MOSFET P-CH 20V 0.4A 3-Pin SC-70 T/R (Alt: 2SJ647-T1-A)
	Mfr.#: 2SJ673-S12-AZ OMO.#: OMO-2SJ673-S12-AZ-1190	ブランドニューオリジナル
	Mfr.#: 2SJ610(TE16L1,NQ)-ND OMO.#: OMO-2SJ610-TE16L1-NQ--ND-1190	ブランドニューオリジナル

2SJ668(Q)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes