2SJ66

2SJ661-1E vs 2SJ660-DL-E vs 2SJ661

 
PartNumber2SJ661-1E2SJ660-DL-E2SJ661
DescriptionMOSFET PCH 4V DRIVE SERIES- Bulk (Alt: 2SJ660-DL-E)
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current38 A--
Rds On Drain Source Resistance29.5 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge80 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation65 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Series2SJ661--
Transistor Type1 P-Channel--
BrandON Semiconductor--
Fall Time195 ns--
Product TypeMOSFET--
Rise Time285 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time295 ns--
Typical Turn On Delay Time33 ns--
Unit Weight0.077603 oz--
メーカー モデル 説明 RFQ
2SJ661-1E MOSFET PCH 4V DRIVE SERIES
2SJ668(TE16L1,NQ) MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm
2SJ660-DL-E - Bulk (Alt: 2SJ660-DL-E)
2SJ661 ブランドニューオリジナル
2SJ667 ブランドニューオリジナル
2SJ668 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ668(Q) ブランドニューオリジナル
2SJ668(TE16L1NQ) ブランドニューオリジナル
2SJ668. ブランドニューオリジナル
2SJ669 ブランドニューオリジナル
2SJ668(TE16L1NQ)-ND ブランドニューオリジナル
Toshiba
Toshiba
2SJ668(TE16L1,NQ) MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm
ON Semiconductor
ON Semiconductor
2SJ661-DL-E MOSFET PCH 4V DRIVE SERIES
2SJ661-DL-1E MOSFET PCH 4V DRIVE SERIES
2SJ661-1E IGBT Transistors MOSFET PCH 4V DRIVE SERIES
2SJ665-DL-E MOSFET PCH 4V DRIVE SERIES
2SJ661-DL-1E RF Bipolar Transistors MOSFET PCH 4V DRIVE SERIES
2SJ661-1EX MOSFET P-CH I2PAK
2SJ661-DL-E MOSFET P-CH 60V 38A SMP-FD
2SJ661-DL-1EX MOSFET P-CH D2PAK
2SJ665-DL-1EX MOSFET P-CH 100V 27A TO263
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