SI2308DS-T1-GE3

SI2308DS-T1-GE3
Mfr. #:
SI2308DS-T1-GE3
メーカー:
Vishay Intertechnologies
説明:
N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3
ライフサイクル:
メーカー新製品
データシート:
SI2308DS-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
SI2308DS-T, SI2308D, SI2308, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***C
Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R
***
60V, 160 MOHMS@10V
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.25W ;RoHS Compliant: Yes
モデル メーカー 説明 ストック 価格
SI2308DS-T1-GE3
DISTI # 15R4904
Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):125mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs Typ:3V,Power Dissipation Pd:1.25W RoHS Compliant: Yes0
    SI2308DS-T1-GE3
    DISTI # 84R8024
    Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:1.25W RoHS Compliant: Yes0
    • 2500:$0.3430
    • 1000:$0.4340
    • 500:$0.4940
    • 250:$0.5760
    • 100:$0.6470
    • 50:$0.7330
    • 25:$0.8030
    • 1:$0.8970
    SI2308DS-T1-GE3
    DISTI # 781-SI2308DS-GE3
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
    RoHS: Compliant
    0
      画像 モデル 説明
      SI2308DS-T1-E3

      Mfr.#: SI2308DS-T1-E3

      OMO.#: OMO-SI2308DS-T1-E3

      MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
      SI2308DS

      Mfr.#: SI2308DS

      OMO.#: OMO-SI2308DS-1190

      ブランドニューオリジナル
      SI2308DS-T1

      Mfr.#: SI2308DS-T1

      OMO.#: OMO-SI2308DS-T1-1190

      MOSFET RECOMMENDED ALT 781-SI2308BDS-T1-GE3
      SI2308DS-T1-E3

      Mfr.#: SI2308DS-T1-E3

      OMO.#: OMO-SI2308DS-T1-E3-VISHAY

      MOSFET N-CH 60V 2A SOT23-3
      SI2308DS-T1-E3/B02

      Mfr.#: SI2308DS-T1-E3/B02

      OMO.#: OMO-SI2308DS-T1-E3-B02-1190

      ブランドニューオリジナル
      SI2308DS-T1-ES , MAX6425

      Mfr.#: SI2308DS-T1-ES , MAX6425

      OMO.#: OMO-SI2308DS-T1-ES-MAX6425-1190

      ブランドニューオリジナル
      SI2308DS-T1-GE3

      Mfr.#: SI2308DS-T1-GE3

      OMO.#: OMO-SI2308DS-T1-GE3-1190

      N CH MOSFET, Transistor Polarity:N Channel, Continuous Drain Current Id:2A, Drain Source Voltage Vds:60V, On Resistance Rds(on):125mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:3
      可用性
      ストック:
      Available
      注文中:
      4500
      数量を入力してください:
      SI2308DS-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $0.51
      $0.51
      10
      $0.49
      $4.89
      100
      $0.46
      $46.31
      500
      $0.44
      $218.65
      1000
      $0.41
      $411.60
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