APT31M100L

APT31M100L
Mfr. #:
APT31M100L
メーカー:
Microchip / Microsemi
説明:
MOSFET FG, MOSFET, 1000V, TO-264
ライフサイクル:
メーカー新製品
データシート:
APT31M100L データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT31M100L DatasheetAPT31M100L Datasheet (P4)
ECAD Model:
製品属性
属性値
メーカー:
マイクロチップ
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-264-3
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
1 kV
Id-連続ドレイン電流:
32 A
Rds On-ドレイン-ソース抵抗:
380 mOhms
Vgs th-ゲート-ソースしきい値電圧:
4 V
Vgs-ゲート-ソース間電圧:
30 V
Qg-ゲートチャージ:
260 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
1.04 kW
構成:
独身
チャネルモード:
強化
包装:
チューブ
ブランド:
マイクロチップ/マイクロセミ
フォワード相互コンダクタンス-最小:
34 S
立ち下がり時間:
33 ns
製品タイプ:
MOSFET
立ち上がり時間:
35 ns
ファクトリーパックの数量:
1
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
130 ns
典型的なターンオン遅延時間:
39 ns
単位重量:
0.352740 oz
Tags
APT31, APT3, APT
Service Guarantees

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 1KV 32A 3-Pin(3+Tab) TO-264
***rochip
MOSFET MOS8 1000 V 31 A TO-264
*** Stop Electro
Power Field-Effect Transistor, 32A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***emi
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
*** Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 100 A, 55 mΩ, TO-264
*** Source Electronics
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA Tube / MOSFET N-CH 500V 100A TO-264
***nell
MOSFET, N-CH, 500V, 100A, TO-264AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V
***roFlash
Power Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***el Electronic
DC DC Converters 1 (Unlimited) 1 8-SMD Module, 5 Leads Surface Mount Isolated Module ITE (Commercial) ECONOLINE R1SE (E-Series) (1W) -40°C~85°C 0.50Lx0.42W x 0.26 H 12.8mmx10.7mmx6.7mm Module DC-DC 5VIN 1-OUT 5V 0.2A 1W 5-Pin SMD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
モデル メーカー 説明 ストック 価格
APT31M100L
DISTI # APT31M100L
Microchip Technology IncPower MOS 8 MOSFET N-Channel 1000V 32A 3-Pin TO-264 - Rail/Tube (Alt: APT31M100L)
RoHS: Compliant
Min Qty: 30
Container: Tube
Americas - 0
  • 300:$10.6900
  • 150:$10.8900
  • 90:$11.1900
  • 60:$11.5900
  • 30:$11.9900
APT31M100L
DISTI # 494-APT31M100L
Microchip Technology IncMOSFET Power MOSFET - MOS8
RoHS: Compliant
12
  • 1:$18.6400
  • 10:$16.9400
  • 25:$15.6700
  • 50:$14.8200
  • 100:$14.3000
  • 250:$13.0500
  • 500:$11.7500
画像 モデル 説明
APT31M100L

Mfr.#: APT31M100L

OMO.#: OMO-APT31M100L

MOSFET FG, MOSFET, 1000V, TO-264
APT31M100B2

Mfr.#: APT31M100B2

OMO.#: OMO-APT31M100B2

MOSFET FG, MOSFET, 1000V, TO-247 T-MAX
APT31M100B2

Mfr.#: APT31M100B2

OMO.#: OMO-APT31M100B2-MICROSEMI

Trans MOSFET N-CH 1KV 32A 3-Pin(3+Tab) T-MAX - Rail/Tube (Alt: APT31M100B2)
APT31M100L

Mfr.#: APT31M100L

OMO.#: OMO-APT31M100L-MICROSEMI

Power MOS 8 MOSFET N-Channel 1000V 32A 3-Pin TO-264 - Rail/Tube (Alt: APT31M100L)
APT31N60SCS

Mfr.#: APT31N60SCS

OMO.#: OMO-APT31N60SCS-1190

ブランドニューオリジナル
APT31N90JC3

Mfr.#: APT31N90JC3

OMO.#: OMO-APT31N90JC3-1190

ブランドニューオリジナル
可用性
ストック:
12
注文中:
1995
数量を入力してください:
APT31M100Lの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$18.64
$18.64
10
$16.94
$169.40
25
$15.67
$391.75
50
$14.82
$741.00
100
$14.30
$1 430.00
250
$13.05
$3 262.50
500
$11.75
$5 875.00
1000
$10.90
$10 900.00
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