SI4346DY-T1-GE3

SI4346DY-T1-GE3
Mfr. #:
SI4346DY-T1-GE3
メーカー:
Vishay / Siliconix
説明:
MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
ライフサイクル:
メーカー新製品
データシート:
SI4346DY-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4346DY-T1-GE3 DatasheetSI4346DY-T1-GE3 Datasheet (P4-P6)SI4346DY-T1-GE3 Datasheet (P7-P8)
ECAD Model:
製品属性
属性値
メーカー:
ビシェイ
製品カテゴリ:
MOSFET
JBoss:
E
テクノロジー:
Si
商標名:
TrenchFET
包装:
リール
シリーズ:
SI4
ブランド:
Vishay / Siliconix
製品タイプ:
MOSFET
ファクトリーパックの数量:
2500
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
SI4346DY-GE3
単位重量:
0.006596 oz
Tags
SI4346D, SI4346, SI434, SI43, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R
***ment14 APAC
N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:5.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.31W
モデル メーカー 説明 ストック 価格
SI4346DY-T1-GE3
DISTI # SI4346DY-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 5.9A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
  • 2500:$0.4158
SI4346DY-T1-GE3
DISTI # 15R4985
Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):19mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs Typ:2V,Power Dissipation Pd:1.31W , RoHS Compliant: Yes0
  • 1:$0.3700
  • 2500:$0.3680
  • 5000:$0.3570
  • 10000:$0.3430
SI4346DY-T1-GE3
DISTI # 84R8044
Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):19mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.31W , RoHS Compliant: Yes0
  • 1:$1.0200
  • 10:$0.9610
  • 25:$0.8710
  • 50:$0.7850
  • 100:$0.7120
  • 250:$0.5970
  • 500:$0.5280
SI4346DY-T1-GE3
DISTI # 781-SI4346DY-GE3
Vishay IntertechnologiesMOSFET 30V 8.0A 2.5W 23mohm @ 10V
RoHS: Compliant
0
    SI4346DY-T1-GE3
    DISTI # 1867186
    Vishay IntertechnologiesN CH MOSFET
    RoHS: Compliant
    0
    • 2500:£0.4670
    画像 モデル 説明
    SI4346DY-T1-GE3

    Mfr.#: SI4346DY-T1-GE3

    OMO.#: OMO-SI4346DY-T1-GE3

    MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
    SI4346DY-T1-GE3

    Mfr.#: SI4346DY-T1-GE3

    OMO.#: OMO-SI4346DY-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 30V 8.0A 2.5W 23mohm @ 10V
    SI4346DY-T1

    Mfr.#: SI4346DY-T1

    OMO.#: OMO-SI4346DY-T1-1190

    ブランドニューオリジナル
    SI4346DY-T1-E3

    Mfr.#: SI4346DY-T1-E3

    OMO.#: OMO-SI4346DY-T1-E3-VISHAY

    MOSFET N-CH 30V 5.9A 8-SOIC
    可用性
    ストック:
    Available
    注文中:
    4000
    数量を入力してください:
    SI4346DY-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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