CSD17579Q3AT

Mfr. #:: CSD17579Q3AT
説明:: IGBT Transistors MOSFET 30V NCh NexFET Pwr MOSFET
ライフサイクル:: メーカー新製品
データシート:: CSD17579Q3AT データシート
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詳しくは:: CSD17579Q3AT 詳しくは CSD17579Q3AT Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: CSD17579Q3A

包装: リール

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: VSONP-8

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 29 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 1 ns

立ち上がり時間: 5 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 39 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.5 V

Rds-On-Drain-Source-Resistance: 11.8 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 11 ns

典型的なターンオン遅延時間: 2 ns

Qg-Gate-Charge: 5.3 nC

フォワード-相互コンダクタンス-最小: 37 S

Tags: CSD17579, CSD1757, CSD175, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17579Q3AT 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD17579Q3AT DISTI # 31708936	Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R RoHS: Compliant	10000	1250:$0.2744 750:$0.2994 500:$0.3410 250:$0.3992
CSD17579Q3AT DISTI # 296-38463-1-ND	MOSFET N-CH 30V 35A 8VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8451In Stock	100:$0.4672 10:$0.6060 1:$0.6900
CSD17579Q3AT DISTI # 296-38463-6-ND	MOSFET N-CH 30V 35A 8VSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8451In Stock	100:$0.4672 10:$0.6060 1:$0.6900
CSD17579Q3AT DISTI # 296-38463-2-ND	MOSFET N-CH 30V 35A 8VSON RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	8250In Stock	1250:$0.2688 750:$0.2940 500:$0.3360 250:$0.3948
CSD17579Q3AT DISTI # V72:2272_07248811	Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R RoHS: Compliant	0
CSD17579Q3AT DISTI # V39:1801_07248811	Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R RoHS: Compliant	0
CSD17579Q3AT DISTI # CSD17579Q3AT	Trans MOSFET N-CH 30V 39A 8-Pin VSONP T/R (Alt: CSD17579Q3AT) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Europe - 1250	2500:€0.2039 1500:€0.2189 1000:€0.2549 500:€0.2779 250:€0.3399
CSD17579Q3AT DISTI # CSD17579Q3AT	Trans MOSFET N-CH 30V 39A 8-Pin VSONP T/R (Alt: CSD17579Q3AT) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Asia - 0
CSD17579Q3AT DISTI # CSD17579Q3AT	Trans MOSFET N-CH 30V 39A 8-Pin VSONP T/R - Tape and Reel (Alt: CSD17579Q3AT) RoHS: Compliant Min Qty: 1500 Container: Reel	Americas - 0	15000:$0.2108 7500:$0.2168 4500:$0.2243 3000:$0.2320 1500:$0.2438
CSD17579Q3AT	30V, N ch NexFET MOSFET™, single SON3x3, 14.2mOhm	4327	1000:$0.1900 750:$0.2100 500:$0.2700 250:$0.3300 100:$0.3500 25:$0.4200 10:$0.4500 1:$0.5000
CSD17579Q3A DISTI # 595-CSD17579Q3A	MOSFET CSD17579Q3A 30 V 8-VSONP RoHS: Compliant	16916	1:$0.6400 10:$0.5300 100:$0.3220 1000:$0.2490 2500:$0.2120 10000:$0.1980 22500:$0.1870
CSD17579Q3AT DISTI # 595-CSD17579Q3AT	MOSFET 30V NCh NexFET Pwr MOSFET RoHS: Compliant	1831	1:$0.6300 10:$0.5200 100:$0.3360 250:$0.3360 1000:$0.2690 2000:$0.2440 5000:$0.2270 10000:$0.2190 25000:$0.2100
CSD17579Q3AT	Power Field-Effect Transistor, 11A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	317	1000:$0.2200 500:$0.2400 100:$0.2500 25:$0.2600 1:$0.2800
CSD17579Q3AT DISTI # 9083849P	N-CHANNEL NEXFET MOSFET 30V 11A SON8, RL	370	400:£0.2340 200:£0.2440 100:£0.2900 50:£0.3340
CSD17579Q3AT DISTI # CSD17579Q3AT	Transistor: N-MOSFET,unipolar,30V,20A,29W,VSONP8 3,3x3,3mm	229	1:$0.6300 5:$0.4700

画像	モデル	説明
	Mfr.#: CSD17575Q3 OMO.#: OMO-CSD17575Q3	MOSFET 30V, N-channel NexFET Pwr MOSFET
	Mfr.#: CSD17556Q5B OMO.#: OMO-CSD17556Q5B	MOSFET 30V N-Ch NexFET Power MOSFETs
	Mfr.#: CSD17577Q5A OMO.#: OMO-CSD17577Q5A	MOSFET 30V, N-channel NexFET Pwr MOSFET
	Mfr.#: CSD17556Q5 OMO.#: OMO-CSD17556Q5-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD17573Q5BT OMO.#: OMO-CSD17573Q5BT-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 100A 8VSON
	Mfr.#: CSD17579Q5AT OMO.#: OMO-CSD17579Q5AT-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 25A 8VSON
	Mfr.#: CSD17507Q5A OMO.#: OMO-CSD17507Q5A-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 65A 8SON
	Mfr.#: CSD17510Q5A OMO.#: OMO-CSD17510Q5A-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 100A 8SON
	Mfr.#: CSD17551Q3A OMO.#: OMO-CSD17551Q3A-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 12A 8VSON
	Mfr.#: CSD17556Q5B OMO.#: OMO-CSD17556Q5B-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 8-VSON

CSD17579Q3AT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes