CSD17551Q3A

Mfr. #:: CSD17551Q3A
説明:: MOSFET N-CH 30V 12A 8VSON
ライフサイクル:: メーカー新製品
データシート:: CSD17551Q3A データシート
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詳しくは:: CSD17551Q3A 詳しくは CSD17551Q3A Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: FET-シングル

シリーズ: NexFET

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: 8-PowerVDFN

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 8-SON (3.3x3.3)

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 2.6W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 1370pF @ 15V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 12A (Tc)

Rds-On-Max-Id-Vgs: 9 mOhm @ 11A, 10V

Vgs-th-Max-Id: 2.1V @ 250μA

ゲートチャージ-Qg-Vgs: 7.8nC @ 4.5V

Pd-電力損失: 2.6 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 3.4 ns

立ち上がり時間: 24 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 48 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.6 V

Rds-On-Drain-Source-Resistance: 11.8 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 12 ns

典型的なターンオン遅延時間: 8 ns

Qg-Gate-Charge: 6 nC

フォワード-相互コンダクタンス-最小: 101 S

Tags: CSD17551, CSD1755, CSD175, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17551Q3A 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD17551Q3A DISTI # 296-35025-1-ND	MOSFET N-CH 30V 12A 8VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5645In Stock	1000:$0.4224 500:$0.5280 100:$0.7128 10:$0.9240 1:$1.0600
CSD17551Q3A DISTI # 296-35025-6-ND	MOSFET N-CH 30V 12A 8VSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5645In Stock	1000:$0.4224 500:$0.5280 100:$0.7128 10:$0.9240 1:$1.0600
CSD17551Q3A DISTI # 296-35025-2-ND	MOSFET N-CH 30V 12A 8VSON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	12500:$0.3332 5000:$0.3460 2500:$0.3716
CSD17551Q3A DISTI # CSD17551Q3A	Trans MOSFET N-CH 30V 12A 8-Pin VSON EP T/R - Tape and Reel (Alt: CSD17551Q3A) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3379 5000:$0.3209 10000:$0.3109 15000:$0.2999 25000:$0.2919
CSD17551Q3A DISTI # CSD17551Q3A	Trans MOSFET N-CH 30V 12A 8-Pin VSON EP T/R (Alt: CSD17551Q3A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD17551Q3A DISTI # CSD17551Q3A	Trans MOSFET N-CH 30V 12A 8-Pin VSON EP T/R (Alt: CSD17551Q3A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.4709 5000:€0.3849 10000:€0.3529 15000:€0.3019 25000:€0.2819
CSD17551Q3A	30V N-Channel MOSFET	5000	1000:$0.2700 750:$0.3000 500:$0.3700 250:$0.4500 100:$0.4900 25:$0.5800 10:$0.6200 1:$0.7000
CSD17551Q3A DISTI # 595-CSD17551Q3A	MOSFET 30V N-Chnl MOSFET RoHS: Compliant	268	1:$0.8700 10:$0.7200 100:$0.4660 1000:$0.3730 2500:$0.3380 5000:$0.3150 10000:$0.3030
CSD17551Q3A	Power Field-Effect Transistor, 12A I(D), 30V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant	141999	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100

画像	モデル	説明
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	Mfr.#: CSD17551Q3A OMO.#: OMO-CSD17551Q3A-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 12A 8VSON
	Mfr.#: CSD17576Q5B OMO.#: OMO-CSD17576Q5B-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 100A 8VSON
	Mfr.#: CSD17581Q3A OMO.#: OMO-CSD17581Q3A-TEXAS-INSTRUMENTS	Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R

CSD17551Q3A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes