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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| IPB021N06N3GATMA1 DISTI # IPB021N06N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB021N06N3GATMA1 DISTI # IPB021N06N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB021N06N3GATMA1 DISTI # IPB021N06N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB021N06N3 G DISTI # IPB021N06N3G | Infineon Technologies AG | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB021N06N3G) RoHS: Not Compliant Min Qty: 224 Container: Bulk | Americas - 0 |
|
| IPB021N06N3 G DISTI # 726-IPB021N06N3G | Infineon Technologies AG | MOSFET N-Ch 60V 120A D2PAK-2 RoHS: Compliant | 0 | |
| IPB021N06N3G | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 479 |
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| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: IPB021N04N OMO.#: OMO-IPB021N04N-1190 |
ブランドニューオリジナル |
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Mfr.#: IPB021N04NG OMO.#: OMO-IPB021N04NG-1190 |
ブランドニューオリジナル |
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Mfr.#: IPB021N04NGATMA1 OMO.#: OMO-IPB021N04NGATMA1-1190 |
ブランドニューオリジナル |
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Mfr.#: IPB021N06N3 OMO.#: OMO-IPB021N06N3-1190 |
ブランドニューオリジナル |
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Mfr.#: IPB021N06N3G OMO.#: OMO-IPB021N06N3G-1190 |
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IPB021N06N3GATMA1 |
MOSFET N-CH 60V 120A TO263-3 |
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Mfr.#: IPB021N06N3 G OMO.#: OMO-IPB021N06N3-G-126 |
IGBT Transistors MOSFET N-Ch 60V 120A D2PAK-2 |
