SCT3017ALHRC11

SCT3017ALHRC11
Mfr. #:
SCT3017ALHRC11
メーカー:
Rohm Semiconductor
説明:
MOSFET 650V 118A 427W SIC 17mOhm TO-247N
ライフサイクル:
メーカー新製品
データシート:
SCT3017ALHRC11 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
SCT3017ALHRC11 詳しくは
製品属性
属性値
メーカー:
ロームセミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
SiC
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247N-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
650 V
Id-連続ドレイン電流:
118 A
Rds On-ドレイン-ソース抵抗:
17 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2.7 V
Vgs-ゲート-ソース間電圧:
- 4 V, 22 V
Qg-ゲートチャージ:
172 nC
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
Pd-消費電力:
427 W
構成:
独身
チャネルモード:
強化
包装:
チューブ
シリーズ:
SCT3x
トランジスタタイプ:
1 N-Channel
ブランド:
ロームセミコンダクター
フォワード相互コンダクタンス-最小:
16 S
立ち下がり時間:
31 ns
製品タイプ:
MOSFET
立ち上がり時間:
44 ns
ファクトリーパックの数量:
30
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
64 ns
典型的なターンオン遅延時間:
30 ns
Tags
SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
AEC-Q101 SiC Power MOSFETs
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch mode power supplies. The SiC Power MOSFETs can be used to boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles.
モデル メーカー 説明 ストック 価格
SCT3017ALHRC11
DISTI # SCT3017ALHRC11-ND
ROHM SemiconductorAUTOMOTIVE GRADE N-CHANNEL SIC P
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 25:$96.1000
  • 10:$98.7880
  • 1:$104.1600
SCT3017ALHRC11
DISTI # 02AH4678
ROHM SemiconductorMOSFET, N-CH, 650V, 118A, 175DEG C, 427W,Transistor Polarity:N Channel,Continuous Drain Current Id:118A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 100:$83.5200
  • 50:$88.8600
  • 25:$90.1800
  • 10:$91.5300
  • 5:$94.2400
  • 1:$96.8400
SCT3017ALHRC11
DISTI # 755-SCT3017ALHRC11
ROHM SemiconductorMOSFET 650V 118A 427W SIC 17mOhm TO-247N
RoHS: Compliant
0
  • 1:$107.5200
  • 5:$105.5400
  • 10:$100.8000
  • 25:$96.1000
SCT3017ALHRC11
DISTI # TMOS2736
ROHM SemiconductorSiC N-CH 650V 118A 17mOhm
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$96.9300
SCT3017ALHRC11
DISTI # 3052180
ROHM SemiconductorMOSFET, N-CH, 650V, 118A, 175DEG C, 427W0
  • 10:£73.3200
  • 5:£77.6800
  • 1:£82.0300
SCT3017ALHRC11
DISTI # 3052180
ROHM SemiconductorMOSFET, N-CH, 650V, 118A, 175DEG C, 427W
RoHS: Compliant
0
  • 1:$146.5300
SCT3017ALHRC11ROHM SemiconductorMOSFET 650V 118A 427W SIC 17mOhm TO-247N
RoHS: Compliant
Americas -
    画像 モデル 説明
    SCT3017ALHRC11

    Mfr.#: SCT3017ALHRC11

    OMO.#: OMO-SCT3017ALHRC11

    MOSFET 650V 118A 427W SIC 17mOhm TO-247N
    SCT3017ALGC11

    Mfr.#: SCT3017ALGC11

    OMO.#: OMO-SCT3017ALGC11-1190

    MOSFET, N-CH, 650V, 118A, 175DEG C, 427W, Transistor Polarity:N Channel, Continuous Drain Current Id:118A, Drain Source Voltage Vds:650V, On Resistance Rds(on):0.017ohm, Rds(on) Test Voltage Vgs:
    SCT3017ALHRC11

    Mfr.#: SCT3017ALHRC11

    OMO.#: OMO-SCT3017ALHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    可用性
    ストック:
    Available
    注文中:
    4000
    数量を入力してください:
    SCT3017ALHRC11の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $107.52
    $107.52
    5
    $105.54
    $527.70
    10
    $100.80
    $1 008.00
    25
    $96.10
    $2 402.50
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