IPB009N03L G

Mfr. #:: IPB009N03L G
メーカー:: Infineon Technologies
説明:: Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
ライフサイクル:: メーカー新製品
データシート:: IPB009N03L G データシート
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詳しくは:: IPB009N03L G 詳しくは

製品属性
属性値

メーカー: インフィニオン

製品カテゴリ: FET-シングル

シリーズ: OptiMOS 3

包装: リール

パーツエイリアス: IPB009N03LGATMA1 IPB009N03LGXT SP000394657

単位重量: 0.056438 oz

取り付けスタイル: SMD / SMT

商標名: OptiMOS

パッケージ-ケース: TO-263-7

テクノロジー: Si

チャネル数: 1 Channel

構成: シングルクイントソース

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 250 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 22 ns

立ち上がり時間: 14 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 180 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 700 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 103 ns

典型的なターンオン遅延時間: 26 ns

チャネルモード: 強化

Tags: IPB009N03LG, IPB00, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB009N03L G 詳しくは

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

モデル	メーカー	説明	ストック	価格
IPB009N03LGATMA1 DISTI # V72:2272_06377968	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	1353	1000:$1.7480 500:$2.1340 250:$2.2700 100:$2.4310 25:$2.5250 10:$2.8060 1:$3.6278
IPB009N03LGATMA1 DISTI # V36:1790_06377968	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$1.4610 500000:$1.4630 100000:$1.5960 10000:$1.8090 1000:$1.8440
IPB009N03LGATMA1 DISTI # IPB009N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1384In Stock	500:$2.2522 100:$2.6457 10:$3.2290 1:$3.6000
IPB009N03LGATMA1 DISTI # IPB009N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1384In Stock	500:$2.2522 100:$2.6457 10:$3.2290 1:$3.6000
IPB009N03LGATMA1 DISTI # IPB009N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 180A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	5000:$1.6861 2000:$1.7519 1000:$1.8441
IPB009N03LGATMA1 DISTI # 26194931	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	1353	4:$3.6278
IPB009N03LGXT DISTI # IPB009N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB009N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 1000	10000:$1.5940 6000:$1.6229 4000:$1.6794 2000:$1.7424 1000:$1.8076
IPB009N03L G DISTI # IPB009N03L G	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	50000:$1.5880 25000:$1.6083 10000:$1.6292 5000:$1.6507 3000:$1.6953 2000:$1.7424 1000:$1.7921
IPB009N03LGATMA1 DISTI # SP000394657	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: SP000394657) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.2900 6000:€1.3900 4000:€1.4900 2000:€1.5900 1000:€1.8900
IPB009N03LGATMA1. DISTI # 15AC3078	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:30V,On Resistance Rds(on):700µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:250W,No. of Pins:7Pins RoHS Compliant: Yes	0	10000:$1.6000 6000:$1.6300 4000:$1.6800 2000:$1.7500 1:$1.8100
IPB009N03L G DISTI # 726-IPB009N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	466	1:$3.3200 10:$2.8200 100:$2.4400 250:$2.3200 500:$2.0800 1000:$1.7500 2000:$1.6600 5000:$1.6000
IPB009N03LGATMA1 DISTI # 726-IPB009N03LGATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	900	1:$3.3200 10:$2.8200 100:$2.4400 250:$2.3200 500:$2.0800 1000:$1.7500 2000:$1.6600 5000:$1.6000
IPB009N03LGATMA1 DISTI # 7545406P	Infineon Technologies AG	MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL	895	500:£1.5200 250:£1.6900 50:£1.8700 10:£2.0500
IPB009N03LG	Infineon Technologies AG		98	3:$2.4600 10:$1.8450 29:$1.5375
IPB009N03LG	Infineon Technologies AG	180 A, 30 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA	89	39:$1.5000 11:$2.0000 1:$3.0000
IPB009N03LG	Infineon Technologies AG	180 A, 30 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA	78	38:$1.2300 11:$2.0500 1:$3.2800
IPB009N03L G DISTI # TMOSP8652	Infineon Technologies AG	N-CH30V 180A1mOhm TO263-3 RoHS: Compliant	Stock DE - 50Stock HK - 0Stock US - 0	1000:$2.2600 2000:$1.7400
IPB009N03LGATMA1 DISTI # 1775514	Infineon Technologies AG	MOSFET, N CH, 180A, 30V, PG-TO263-7	1885	500:£1.5300 250:£1.7000 100:£1.7900 10:£2.0600 1:£2.8800
IPB009N03LGATMA1 DISTI # 1775514	Infineon Technologies AG	MOSFET, N CH, 180A, 30V, PG-TO263-7 RoHS: Compliant	500	2000:$2.5000 1000:$2.6400 500:$3.1300 250:$3.5000 100:$3.6800 10:$4.2500 1:$5.0000

画像	モデル	説明
	Mfr.#: IPB009N03LGATMA1 OMO.#: OMO-IPB009N03LGATMA1	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB009N03L G OMO.#: OMO-IPB009N03L-G	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB009N03LGATMA1 OMO.#: OMO-IPB009N03LGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 180A TO263-7
	Mfr.#: IPB009N03L OMO.#: OMO-IPB009N03L-1190	ブランドニューオリジナル
	Mfr.#: IPB009N03L G OMO.#: OMO-IPB009N03L-G-1190	Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
	Mfr.#: IPB009N03LG OMO.#: OMO-IPB009N03LG-1190	MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL

IPB009N03L G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes