SKM400GA12E4

Mfr. #:: SKM400GA12E4
メーカー:: SEMIKRON
説明:: IGBT MODULE, SINGLE, 1.2KV, 616A, Transistor Polarity:NPN, DC Collector Current:616A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo
ライフサイクル:: メーカー新製品
データシート:: SKM400GA12E4 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: セミクロン

製品カテゴリ: ICチップ

Tags: SKM400GA12, SKM400GA1, SKM400GA, SKM400, SKM40, SKM4, SKM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SKM400GA12E4 説明

***(Formerly Allied Electronics): IGBT, D-59, IGBT, 1200 V, 565 A, 1200 V, 5.5 V (Typ.), 70 ns (Typ.)

***ark: IGBT MODULE, SINGLE, 1.2KV, 616A; Continuous Collector Current:616A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

***ikron: Features: IGBT4 = 4. Generation (Trench)IGBT V CEsat with positive temperaturecoefficient High short circuit capability, selflimiting to 6 x I CNOM Soft switching 4. Generation CALdiode (CAL4) UL recognized, file no. E63532 Typical Applications: AC inverter drives UPS Electronic welders Switched reluctance motor

*** Electronics: IGBT Array & Module Transistor, N Channel, 440 A, 1.7 V, 1.45 kW, 1.2 kV, Module

***ow.cn: Trans IGBT Module N-CH 1200V 440A 1450000mW Automotive 7-Pin 62MM-1 Tray

***ment14 APAC: IGBT MODULE, DUAL, 1200V; Module Configuration:Dual; DC Collector Current:440A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:1.45kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:7; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:M62a; Current Ic Continuous a Max:300A; Current Temperature:80°C; Fall Time tf:0.13µs; Package / Case:Econopack 3; Power Dissipation Max:1.45kW; Power Dissipation Pd:1.45kW; Power Dissipation Pd:1.45kW; Pulsed Current Icm:600A; Rise Time:0.09µs; Termination Type:Screw; Voltage Vces:1.2kV

***ineon: Our well-known 62 mm 1200V dual IGBT modules with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency Diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 900A 2800000mW Automotive 4-Pin 62MM-2 Tray

***nell: IGBT MODULE, 1200V; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:600A; Voltage, Vce Sat Max:2.15V; Power Dissipation:2800W; Case Style:Custom; Termination Type:Screw; Operating Temperature Range:-40°C to +125°C; SVHC:Cobalt dichloride; Collector-to-Emitter Breakdown Voltage:1200V; Current Temperature:80°C; Current, Icm Pulsed:1200A; Full Power Rating Temperature:25°C; Power Dissipation Pd:2800W; Rise Time:90ns; Voltage, Vce Sat Typ:1.7V

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 650A 2250000mW Automotive 4-Pin 62MM-2 Tray

***ark: Transistor, Igbt Module, 1.2Kv, 650A; Transistor Polarity:n Channel; Dc Collector Current:650A; Collector Emitter Saturation Voltage Vce(On):1.7V; Power Dissipation Pd:2.25Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Caserohs Compliant: Yes

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 125 C (max 150 C); Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

Market price

モデル	メーカー	説明	ストック	価格
SKM400GA12E4 DISTI # 77R2583	SEMIKRON	IGBT MODULE, SINGLE, 1.2KV, 616A,Transistor Polarity:NPN,DC Collector Current:616A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:-,Product Range:-RoHS Compliant: Yes	0	100:$106.1500 50:$112.9500 25:$114.6500 10:$116.3400 5:$119.7400 1:$123.1400
SKM400GA12E4 DISTI # 70098166	SEMIKRON	IGBT,D-59,IGBT,1200 V,565 A,1200 V,5.5 V (Typ.),70 ns (Typ.) RoHS: Compliant	0	1:$174.1100 12:$164.8100 36:$156.4400 96:$148.8800 144:$142.0500

関連製品

画像	モデル	説明
	Mfr.#: SKM400GB176D OMO.#: OMO-SKM400GB176D-1190	SEMITRANS, IGBT HALFBRIDGE TRENCH, 1700V
	Mfr.#: SKM400GA123D H4 OMO.#: OMO-SKM400GA123D-H4-1190	ブランドニューオリジナル
	Mfr.#: SKM400GA124DE OMO.#: OMO-SKM400GA124DE-1190	ブランドニューオリジナル
	Mfr.#: SKM400GA128D OMO.#: OMO-SKM400GA128D-1190	ブランドニューオリジナル
	Mfr.#: SKM400GA12E4 OMO.#: OMO-SKM400GA12E4-1190	IGBT MODULE, SINGLE, 1.2KV, 616A, Transistor Polarity:NPN, DC Collector Current:616A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo
	Mfr.#: SKM400GAL123D OMO.#: OMO-SKM400GAL123D-1190	ブランドニューオリジナル
	Mfr.#: SKM400GAL12T4 OMO.#: OMO-SKM400GAL12T4-1190	IGBT MODULE, SINGLE, 1.2KV, 616A, Transistor Polarity:NPN, DC Collector Current:616A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo
	Mfr.#: SKM400GAR128D OMO.#: OMO-SKM400GAR128D-1190	Insulated Gate Bipolar Transistor, 565A I(C), 1200V V(BR)CES, N-Channel
	Mfr.#: SKM400GB123D OMO.#: OMO-SKM400GB123D-1190	ブランドニューオリジナル
	Mfr.#: SKM400GB124D OMO.#: OMO-SKM400GB124D-1190	IGBT Module, Transistor Polarity:N Channel, DC Collector Current:570A, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:7, Collector Emitter Saturation Voltage:2.1V,

可用性

ストック:: Available
注文中:: 2000
数量を入力してください:

SKM400GA12E4の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。

参考価格（USD）

量
単価
小計金額

1: ~~$159.22~~; ~~$159.22~~

10: ~~$151.26~~; ~~$1 512.64~~

100: ~~$143.30~~; ~~$14 330.25~~

500: ~~$135.34~~; ~~$67 670.65~~

1000: ~~$127.38~~; ~~$127 380.00~~

皮切りに

SKM400GA12 12
SKM400GA1 16
SKM400GA 30
SKM400 47
SKM40 58
SKM4 60
SKM 492

SKM400GA12E4

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes