RJH1CF6RDPQ-80#T2

Mfr. #:: RJH1CF6RDPQ-80#T2
メーカー:: Renesas Electronics
説明:: IGBT Transistors IGBT
ライフサイクル:: メーカー新製品
データシート:: RJH1CF6RDPQ-80#T2 データシート
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HTML Datasheet:: RJH1CF6RDPQ-80#T2 Datasheet RJH1CF6RDPQ-80#T2 Datasheet (P4-P6)RJH1CF6RDPQ-80#T2 Datasheet (P7)
ECAD Model:

製品属性
属性値

メーカー：: ルネサスエレクトロニクス

製品カテゴリ：: IGBTトランジスタ

JBoss：: Y

テクノロジー：: Si

包装：: チューブ

ブランド：: ルネサスエレクトロニクス

感湿性：: はい

製品タイプ：: IGBTトランジスタ

ファクトリーパックの数量：: 1

サブカテゴリ：: IGBT

Tags: RJH1CF, RJH1C, RJH1, RJH

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RJH1CF6RDPQ-80#T2 説明

***et: Trans IGBT Chip N-CH 1.2KV 55A 3-Pin TO-247 Tube

***i-Key: IGBT 1200V 55A 227.2W TO247

*** Electronic Components: IGBT Transistors IGBT

***ical: Trans IGBT Chip N-CH 1.2KV 55A 3-Pin(3+Tab) TO-247AC

***ernational Rectifier: 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, TO-247AC

***ark: TUBE / 1200V 55.000A TO-247 ;ROHS COMPLIANT: YES

***or: IGBT W/ULTRAFAST SOFT RECOVERY D

***el Electronic: THERMISTOR NTC 10KOHM 3380K 0603

***ment14 APAC: IGBT,N CH,1200V,55A,TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:210W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:210W

***ernational Rectifier: 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package

***ical: Trans IGBT Chip N-CH 1.2KV 55A 3-Pin(3+Tab) TO-247AD

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, TO-247AD

***el Electronic: Inductor Variable Wirewound 2500uH 5% 252KHz 25Q-Factor Automotive

***or: IRG7PH35 - DISCRETE IGBT WITHOUT

***p One Stop Global: Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube

***(Formerly Allied Electronics): 1200V ULTRAFAST 5-40 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PH40UPBF

***ure Electronics: IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W

***ment14 APAC: IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

***ure Electronics: IGBT Transistors 1200V/25 FAST IGBT FSII T

***i-Key: IGBT FIELD STOP 1200V 50A TO247

***ure Electronics: FGA20N120FTD Series 1200 V 40 A Field Stop Trench IGBT-TO-3PN

***ow.cn: Trans IGBT Chip N-CH 1200V 40A 298000mW 3-Pin(3+Tab) TO-3P Tube

***emi: IGBT, 1200V, 20A, Field Stop Trench

***ark: Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant: Yes

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors 1200V N-Chan Trench

***rchild Semiconductor: Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.