DMG6601LVT-7

Mfr. #:: DMG6601LVT-7
メーカー:: Diodes Incorporated
説明:: MOSFET N/P-CH 30V 26TSOT
ライフサイクル:: メーカー新製品
データシート:: DMG6601LVT-7 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: ダイオード

製品カテゴリ: FET-アレイ

シリーズ: DMG6601

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

パッケージ-ケース: SOT-23-6 Thin, TSOT-23-6

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: TSOT-26

構成: NチャネルPチャネル

FETタイプ: NおよびPチャネル

パワーマックス: 850mW

トランジスタタイプ: 1 N-Channel 1 P-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 422pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 3.8A, 2.5A

Rds-On-Max-Id-Vgs: 55 mOhm @ 3.4A, 10V

Vgs-th-Max-Id: 1.5V @ 250μA

ゲートチャージ-Qg-Vgs: 12.3nC @ 10V

Pd-電力損失: 850 mW

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 15.6 ns 2.2 ns

立ち上がり時間: 4.6 ns 7.4 ns

Id-連続-ドレイン-電流: 3.8 A 2.5 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.5 V

Rds-On-Drain-Source-Resistance: 85 mOhms 190 mOhms

トランジスタ-極性: NチャネルPチャネル

典型的なターンオフ遅延時間: 31.2 ns 18.3 ns

典型的なターンオン遅延時間: 1.6 ns 1.7 ns

Qg-Gate-Charge: 5.4 nC 6.5 nC

チャネルモード: 強化

Tags: DMG6601, DMG66, DMG6, DMG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMG6601LVT-7 説明

***ical: Trans MOSFET N/P-CH 30V 3.8A/2.5A Automotive 6-Pin TSOT-26 T/R

***ure Electronics: N & P-Channel 30 V 110 mOhm Complementary Pair Enhancement Mode Mosfet

***ark: Mosfet Bvdss: 25V~30V Tsot26 T&r 3K Rohs Compliant: Yes

***ied Electronics & Automation: Complem. Pair Enhancement MOSFET TSOT-26

***ponent Sense: COMPLEMENTARY PAIR OTHER (SEE ADDITIONA

***ronik: N+P-CH 30/-30V 3,8/-2,5A TSOT26

Market price

モデル	メーカー	説明	ストック	価格
DMG6601LVT-7 DISTI # DMG6601LVT-7DITR-ND	Diodes Incorporated	MOSFET N/P-CH 30V 26TSOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.0981
DMG6601LVT-7 DISTI # DMG6601LVT-7DICT-ND	Diodes Incorporated	MOSFET N/P-CH 30V 26TSOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1112 500:$0.1418 100:$0.2336 10:$0.3510 1:$0.4900
DMG6601LVT-7 DISTI # DMG6601LVT-7DIDKR-ND	Diodes Incorporated	MOSFET N/P-CH 30V 26TSOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1112 500:$0.1418 100:$0.2336 10:$0.3510 1:$0.4900
DMG6601LVT-7 DISTI # DMG6601LVT-7	Diodes Incorporated	Trans MOSFET N/P-CH 30V 3.8A/2.5A 6-Pin TSOT-26 T/R - Tape and Reel (Alt: DMG6601LVT-7) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0629 6000:$0.0599 12000:$0.0569 18000:$0.0539 30000:$0.0529
DMG6601LVT-7 DISTI # DMG6601LVT-7	Diodes Incorporated	Trans MOSFET N/P-CH 30V 3.8A/2.5A 6-Pin TSOT-26 T/R (Alt: DMG6601LVT-7) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.0659 6000:€0.0649 12000:€0.0639 18000:€0.0629 30000:€0.0629
DMG6601LVT-7 DISTI # DMG6601LVT-7	Diodes Incorporated	Trans MOSFET N/P-CH 30V 3.8A/2.5A 6-Pin TSOT-26 T/R (Alt: DMG6601LVT-7) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0	6000:$0.0629 12000:$0.0602 18000:$0.0576 30000:$0.0560 60000:$0.0553 150000:$0.0538 300000:$0.0524
DMG6601LVT-7 DISTI # 70550676	Diodes Incorporated	Complem. Pair Enhancement MOSFET TSOT-26 RoHS: Compliant	0	250:$0.1250 500:$0.1230 1250:$0.1190 2500:$0.1140 6250:$0.1070
DMG6601LVT-7 DISTI # 621-DMG6601LVT-7	Diodes Incorporated	MOSFET 30V Comp ENH Mode 25 to 30V MosFET RoHS: Compliant	0	1:$0.4700 10:$0.3030 100:$0.1300 1000:$0.1000 3000:$0.0760 9000:$0.0680 24000:$0.0630 45000:$0.0560
DMG6601LVT-7 DISTI # TMOS1260	Diodes Incorporated	N+P-CH 30/-30V 3,8/-2,5A TSOT26	Stock DE - 0Stock US - 0	3000:$0.0803 6000:$0.0756 9000:$0.0711 12000:$0.0642 18000:$0.0619
DMG6601LVT-7 DISTI # 2543535	Diodes Incorporated	MOSFET, N & P-CH, 30V, TSOT-26 RoHS: Compliant	0	5:£0.2720 25:£0.2290 100:£0.1080 250:£0.1030 500:£0.0817

画像	モデル	説明
	Mfr.#: DMG6602SVTQ-7 OMO.#: OMO-DMG6602SVTQ-7	MOSFET 30V Vds 20V Vgs Complmtry Enh FET
	Mfr.#: DMG6602SVT-7 OMO.#: OMO-DMG6602SVT-7	MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
	Mfr.#: DMG6601LVT-7 OMO.#: OMO-DMG6601LVT-7	MOSFET 30V Comp ENH Mode 25 to 30V MosFET
	Mfr.#: DMG6602SVT-7 OMO.#: OMO-DMG6602SVT-7-DIODES	ブランドニューオリジナル
	Mfr.#: DMG6602SVT-7-F OMO.#: OMO-DMG6602SVT-7-F-1190	ブランドニューオリジナル
	Mfr.#: DMG6602SVTX OMO.#: OMO-DMG6602SVTX-1190	ブランドニューオリジナル
	Mfr.#: DMG6602SVTX-7 OMO.#: OMO-DMG6602SVTX-7-DIODES	MOSFET BVDSS: 25V-30V TSOT26 T&R
	Mfr.#: DMG6602SVT-7-CUT TAPE OMO.#: OMO-DMG6602SVT-7-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: DMG6602SVTQ-7 OMO.#: OMO-DMG6602SVTQ-7-DIODES	IGBT Transistors MOSFET 30V Vds 20V Vgs Complmtry Enh FET
	Mfr.#: DMG6601LVT-7 OMO.#: OMO-DMG6601LVT-7-DIODES	MOSFET N/P-CH 30V 26TSOT

DMG6601LVT-7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes