BSZ018NE2LSIXT

Mfr. #:: BSZ018NE2LSIXT
メーカー:: Infineon Technologies
説明:: RF Bipolar Transistors MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
ライフサイクル:: メーカー新製品
データシート:: BSZ018NE2LSIXT データシート
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ECAD Model:
詳しくは:: BSZ018NE2LSIXT 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: OptiMOS

包装: リール

パーツエイリアス: BSZ018NE2LSIATMA1 SP000906032

取り付けスタイル: SMD / SMT

商標名: OptiMOS

パッケージ-ケース: TSDSON-8

テクノロジー: Si

チャネル数: 1 Channel

構成: シングルクワッドドレイントリプルソース

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 69 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 3.4 ns

立ち上がり時間: 4.4 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 40 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 25 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.2 V to 2 V

Rds-On-Drain-Source-Resistance: 1.8 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 26 ns

典型的なターンオン遅延時間: 5.5 ns

Qg-Gate-Charge: 39 nC

フォワード-相互コンダクタンス-最小: 140 S

Tags: BSZ018NE2LSI, BSZ018NE, BSZ018, BSZ01, BSZ0, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ018NE2LSIXT 詳しくは

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

モデル	メーカー	説明	ストック	価格
BSZ018NE2LSIXT DISTI # BSZ018NE2LSIATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 22A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ018NE2LSIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 5000	50000:$0.5179 30000:$0.5309 20000:$0.5449 10000:$0.5599 5000:$0.5749
BSZ018NE2LSIXT DISTI # 726-BSZ018NE2LSIATMA	Infineon Technologies AG	MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS RoHS: Compliant	4974	1:$1.5400 10:$1.3100 100:$1.0500 500:$0.9190 1000:$0.7620 2500:$0.7090 5000:$0.6830 10000:$0.6570

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