IPB50CN10N G

IPB50CN10N G
Mfr. #:
IPB50CN10N G
メーカー:
Infineon Technologies AG
説明:
IGBT Transistors MOSFET N-Ch 100V 20A D2PAK-2
ライフサイクル:
メーカー新製品
データシート:
IPB50CN10N G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
製品属性
属性値
Tags
IPB50CN10NG, IPB50C, IPB50, IPB5, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CHANNEL, 100V, 20A, TO-263
***el Electronic
Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
***nell
MOSFET, N CH, 20A, 100V, PG-TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 44W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 20A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
モデル メーカー 説明 ストック 価格
IPB50CN10NGATMA1
DISTI # IPB50CN10NGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 20A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB50CN10NGATMA1
    DISTI # IPB50CN10NGATMA1
    Infineon Technologies AGTrans MOSFET N-CH 100V 20A 3-Pin TO-263 T/R - Bulk (Alt: IPB50CN10NGATMA1)
    Min Qty: 642
    Container: Bulk
    Americas - 0
    • 6420:$0.4949
    • 3210:$0.5039
    • 1926:$0.5219
    • 1284:$0.5409
    • 642:$0.5609
    IPB50CN10NGATMA1Infineon Technologies AGPower Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant
    7000
    • 1000:$0.5100
    • 500:$0.5400
    • 100:$0.5600
    • 25:$0.5900
    • 1:$0.6300
    画像 モデル 説明
    IPB50CN10N

    Mfr.#: IPB50CN10N

    OMO.#: OMO-IPB50CN10N-1190

    ブランドニューオリジナル
    IPB50CN10NG

    Mfr.#: IPB50CN10NG

    OMO.#: OMO-IPB50CN10NG-1190

    ブランドニューオリジナル
    IPB50CN10NGATMA1

    Mfr.#: IPB50CN10NGATMA1

    OMO.#: OMO-IPB50CN10NGATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 100V 20A TO263-3
    IPB50CN10N G

    Mfr.#: IPB50CN10N G

    OMO.#: OMO-IPB50CN10N-G-126

    IGBT Transistors MOSFET N-Ch 100V 20A D2PAK-2
    可用性
    ストック:
    Available
    注文中:
    3000
    数量を入力してください:
    IPB50CN10N Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $0.00
    $0.00
    10
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    $0.00
    100
    $0.00
    $0.00
    500
    $0.00
    $0.00
    1000
    $0.00
    $0.00
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