SI3851DV-T1-GE3

SI3851DV-T1-GE3
Mfr. #:
SI3851DV-T1-GE3
メーカー:
Vishay / Siliconix
説明:
MOSFET 30V 1.8A 1.15W 200mohm @ 10V
ライフサイクル:
メーカー新製品
データシート:
SI3851DV-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
SI3851DV-T1-GE3 詳しくは
製品属性
属性値
メーカー:
ビシェイ
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TSOP-6
商標名:
TrenchFET
包装:
リール
高さ:
1.1 mm
長さ:
3.05 mm
シリーズ:
SI3
幅:
1.65 mm
ブランド:
Vishay / Siliconix
製品タイプ:
MOSFET
ファクトリーパックの数量:
3000
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
SI3851DV-GE3
単位重量:
0.000705 oz
Tags
SI3851DV-T, SI3851, SI385, SI38, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
P-CH TSOP-6 30V 200MOHM @ 10V W/ 0.5A SCHOTTKY DIODE
***ment14 APAC
P CHANNEL MOSFET, -30V, 1.8A; Transistor Polarity:P Channel + Schottky Diode; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V
***ark
P CHANNEL MOSFET, -30V, 1.8A; Transistor Polarity:P Channel / Schottky Diode; Continuous Drain Current, Id:1.8A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:-10V ;RoHS Compliant: Yes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
モデル メーカー 説明 ストック 価格
SI3851DV-T1-GE3
DISTI # SI3851DV-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V ±1.6A 8-Pin TSOP T/R - Tape and Reel (Alt: SI3851DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.3629
  • 6000:$0.3529
  • 12000:$0.3379
  • 18000:$0.3289
  • 30000:$0.3199
SI3851DV-T1-GE3
DISTI # 781-SI3851DV-GE3
Vishay IntertechnologiesMOSFET 30V 1.8A 1.15W 200mohm @ 10V
RoHS: Compliant
0
  • 3000:$0.3500
  • 6000:$0.3330
  • 9000:$0.3210
  • 24000:$0.3100
画像 モデル 説明
SI3851DV-T1-GE3

Mfr.#: SI3851DV-T1-GE3

OMO.#: OMO-SI3851DV-T1-GE3

MOSFET 30V 1.8A 1.15W 200mohm @ 10V
SI3851DV-T1-E3

Mfr.#: SI3851DV-T1-E3

OMO.#: OMO-SI3851DV-T1-E3

MOSFET 30V 1.8A 1.15W
SI3851DV-T1-GE3

Mfr.#: SI3851DV-T1-GE3

OMO.#: OMO-SI3851DV-T1-GE3-317

RF Bipolar Transistors MOSFET 30V 1.8A 1.15W 200mohm @ 10V
SI3851DV

Mfr.#: SI3851DV

OMO.#: OMO-SI3851DV-1190

ブランドニューオリジナル
SI3851DV-T1

Mfr.#: SI3851DV-T1

OMO.#: OMO-SI3851DV-T1-1190

ブランドニューオリジナル
SI3851DV-T1-E3

Mfr.#: SI3851DV-T1-E3

OMO.#: OMO-SI3851DV-T1-E3-VISHAY

MOSFET P-CH 30V 1.6A 6-TSOP
SI3851DV-T1-ES

Mfr.#: SI3851DV-T1-ES

OMO.#: OMO-SI3851DV-T1-ES-1190

ブランドニューオリジナル
可用性
ストック:
Available
注文中:
1000
数量を入力してください:
SI3851DV-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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